Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Ki-Ju Im"'
Autor:
Jang-Kun Song, Jongwoo Park, Minjun Song, Pyungho Choi, Hyo-Jung Kim, Soonkon Kim, Byoungdeog Choi, Hyuncheol Hwang, Ki-Ju Im, Taeyoung Khim, Sangmin Lee
Publikováno v:
IEEE Electron Device Letters. 41:737-740
In this paper, we propose a novel mechanism for the $\text{V}_{{\text {th}}}$ shift of amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors under negative bias illumination stress (NBIS). Three kinds of IGZO TFTs with different gate die
Autor:
Hyo-Jung Kim, Hyuncheol Hwang, Junehwan Kim, Sam Yong Chung, Taeyoung Khim, Jongwoo Park, Ki-Ju Im
Publikováno v:
SID Symposium Digest of Technical Papers. 51:1319-1321
Autor:
Jongmin Yoo, Jungmin Park, Soonkon Kim, Pyungho Choi, Bosung Kim, Hyuncheol Hwang, Changyong Oh, Jang-Kun Song, Ki-Ju Im, Hyo-Jung Kim, Byoungdeog Choi
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035312-035312-5 (2021)
In this paper, the dependence of threshold voltage (Vth) changes to amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) under positive bias light illumination (PBIS) on the height of the conduction band offset was studied. Using
Autor:
Jong Han Jeong, Ki-Ju Im, Seoung-Il Park, Byung-hee Kim, Yong-Sung Park, Sang-soo Kim, Chul-Kyu Kang, Bo-Yong Chung
Publikováno v:
SID Symposium Digest of Technical Papers. 42:718-721
Oxide TFTs have a negative threshold voltage (Vth), which can become even more negative in response to DC or AC stress. Therefore, these voltage stresses can cause severe leakage current in a scan driver. In this paper, a scan driver with dynamic thr
Autor:
Moongyu Jang, Chang-Geun Ahn, Ki-Ju Im, Jong-Heon Yang, Byungchul Park, In-Bok Baek, Seongjae Lee, Gun Yong Sung
Publikováno v:
Thin Solid Films. 517:1825-1828
In this paper, a Schottky barrier polycrystalline silicon thin-film transistor (SB TFT) with erbium silicide source/drain is demonstrated using low temperature processes. A low temperature oxide is used for a gate dielectric and the transistor channe
Publikováno v:
Organic Electronics. 9:878-882
Memory characteristics of gold nanoparticle-embedded metal–insulator–semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by th
Autor:
Yeon-Gon Mo, Denis Stryakhilev, Mu-gyeom Kim, Hui-Won Yang, Roman Kondratyuk, Chaun Gi Choi, Sang-soo Kim, Ki-Ju Im, Hye-Dong Kim, Hye-Hyang Park
Publikováno v:
IEEE Electron Device Letters. 32:503-505
We extracted the effective channel length and parasitic series resistance in a-IGZO inverted-staggered etch-stop (ES) TFTs. When there is an overlap between the drain or source electrode and the FET channel, the resistance of the channel underneath t
Autor:
Ji Ho Hur, Ki Ju Im, Nam Kil Son, Ah Ruem Kim, Dong Seob Jeong, Won Hoon Park, Dongkyu Lee, Se Hwan Kim, Jang Hyuk Kwon, Seunghoon Lee, Jin Jang, Ho Kyoon Chung, Yeon-Gon Mo
Publikováno v:
SID Symposium Digest of Technical Papers. 39:724
We developed a 2 inch low temperature poly-Si active-matrix organic light-emitting diode (AMOLED) with an embedded p-i-n photodiode. The pixels for both OLED and photodiode are designed using poly-Si TFT and poly-Si p-i-n. The lateral p-i-n photodiod
Publikováno v:
2006 IEEE Nanotechnology Materials & Devices Conference; 2006, p422-423, 2p