Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Ki-Chang Jung"'
Effects of Controlling the AZO Thin Film's Optical Band Gap on AZO/MEH-PPV Devices with Buffer Layer
Autor:
Jaehyoung Park, Ki-Chang Jung, Ari Lee, Hyojung Bae, Daehwa Mun, Jun-Seok Ha, Young-Bu Mun, E. M. Han, Hang-Ju Ko
Publikováno v:
International Journal of Photoenergy, Vol 2012 (2012)
Organic/inorganic hybrid solar cells were fabricated incorporating aluminum-doped zinc oxide (AZO) thin films of varying optical band gap in AZO/poly(2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) structures. The band gaps were controlled by
Externí odkaz:
https://doaj.org/article/981bc7be041b4a35a5bbacf2408b6e16
Publikováno v:
Science of Advanced Materials. 10:225-228
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25c85e8be25e5654937a4d048574a498
https://doi.org/10.1166/sam.2018.2956
https://doi.org/10.1166/sam.2018.2956
Publikováno v:
Korean Journal Metals and Materals. 51:449-453
Acidic PEDOT:PSS anode buffer layers (ABLs) are widely used for improving efficiency in organic based solar cells. Recently, stable p-type metal oxides, such as NiO, MoO3, and V2O5, have been used to replace the commonly used acidic PEDOT:PSS ABL. Am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dad692b4c590246bcd28bbde904504a2
https://doi.org/10.3365/kjmm.2013.51.6.449
https://doi.org/10.3365/kjmm.2013.51.6.449
Autor:
D. H. Mun, Ki-Chang Jung, Hyojung Bae, T. Jeong, Tae-Sung Oh, Jun-Seok Ha, Jaehyoung Park, S. J. Bak, Inwoo Lee
Publikováno v:
Electronic Materials Letters. 9:367-370
In this study, we investigated the effect of Al pre-deposition time on GaN crystal quality. The GaN layer was grown on a Si (111) substrate by metal organic chemical vapor deposition using an AlN buffer layer. Atomic force microscopy, scanning electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54605f9ee3a915063bbaa8cb0bcdb59f
https://doi.org/10.1007/s13391-013-2203-6
https://doi.org/10.1007/s13391-013-2203-6
Effects of Controlling the AZO Thin Film's Optical Band Gap on AZO/MEH-PPV Devices with Buffer Layer
Autor:
Hyojung Bae, Dae-Hwa Mun, Hang-Ju Ko, Jaehyoung Park, Young-Bu Mun, Ki-Chang Jung, Jun-Seok Ha, E. M. Han, Ari Lee
Publikováno v:
International Journal of Photoenergy, Vol 2012 (2012)
Organic/inorganic hybrid solar cells were fabricated incorporating aluminum-doped zinc oxide (AZO) thin films of varying optical band gap in AZO/poly(2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) structures. The band gaps were controlled by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7b210e9a73429dc9d7a07c46201dff1
https://doi.org/10.1155/2012/614320
https://doi.org/10.1155/2012/614320
Publikováno v:
MATERIALS TRANSACTIONS. 48:249-257
In this study, a nano-sized ITO powder with the average particle size below 50 nm by using waste ITO target is generated by spray pyrolysis proces. This study also examines the influences of reaction parameters such as reaction temperature, concentra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::449fea55e022e1f3673fde7b88b3cb4d
https://doi.org/10.2320/matertrans.48.249
https://doi.org/10.2320/matertrans.48.249
Autor:
Jaehyoung Park, Chung Yi Kim, Jina Jeon, Jung-Soo Lee, Ki-Chang Jung, Hui-Youn Shin, Hyojung Bae, Sukkoo Jung, Jun-Seok Ha, Yoonho Choi, Hyunggu Kim, Inwoo Lee
Publikováno v:
Japanese Journal of Applied Physics. 53:090307
We report on the origin of the non-ohmic behavior of Ni/Au-based p-type contacts on a nonpolar a-plane GaN layer. The contact properties of Ga-polar c-plane GaN and nonpolar a-plane GaN are compared. While the Ga-polar c-plane shows ohmic-contact pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935724631d9d5ccf68ff41ddf4dfd53e
https://doi.org/10.7567/jjap.53.090307
https://doi.org/10.7567/jjap.53.090307
Autor:
Jun-Seok Ha, Akihiro Nakamura, Katsushi Fujii, Young Boo Moon, Hyo-Jong Lee, Ki-Chang Jung, Tak Jeong, Hyung-Jo Park, Jaehyoung Park, Hyojung Bae
Publikováno v:
Japanese Journal of Applied Physics. 52:08JN26
The band-edge potential and photocurrent density of N-face GaN were experimentally determined to be more negative and greater than those of Ga-face GaN, respectively, in this photoelectrochemical experiment. These results indicate that the N-face GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8d818ed67f042244dcad8f080c6988c
https://doi.org/10.7567/jjap.52.08jn26
https://doi.org/10.7567/jjap.52.08jn26
Publikováno v:
Korean Journal of Materials Research. 23:194~198-194~198
In this paper, we studied a p-type reflector based on indium tin oxide (ITO) for vertical-type ultraviolet light-emitting diodes (UV LEDs). We investigated the reflectance properties with different deposition methods. An ITO layer with a thickness of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7700271c7418d85b5c736a5f232c1906
https://doi.org/10.3740/mrsk.2013.23.3.194
https://doi.org/10.3740/mrsk.2013.23.3.194
Autor:
Won-Sik Choi, Jun-Seok Ha, Hyung-Jo Park, Jong Hyeob Baek, Si-Hyun Park, Ki Chang Jung, Tak Jeong
Publikováno v:
Journal of Materials Science: Materials in Electronics. 26(6):3397-3402
We report improvement of improvement effectiveness of the light extraction efficiency of 10 W operated InGaN-based vertical light-emitting diodes via n-GaN surface roughening, using a commercial photoresist (PR) developer as an etching solution, whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::409f38f191ddba9cd700507a4b80bd69