Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Ki Yeol Park"'
Autor:
Huiru Li, Hanbi Moon, Eun Ju Kang, Ja-Myung Kim, Miok Kim, Kitack Lee, Cheol-Woo Kwak, Haryun Kim, Il-Nam Kim, Ki Yeol Park, Young Kweon Lee, Ji Woong Jin, Matthew S. Edwards, Ju-Hyoung Kim
Publikováno v:
Frontiers in Marine Science, Vol 9 (2022)
As concerns about ocean acidification continue to grow, the importance of macroalgal communities in buffering coastal seawater biogeochemistry through their metabolisms is gaining more attention. However, studies on diel and seasonal fluctuations in
Externí odkaz:
https://doaj.org/article/441e0c9a023a4e64a51a76acbed8a5ba
Publikováno v:
Journal of periodontalimplant science.
The present study was designed to compare the incidence of periodontitis according to menopausal status and to investigate the possible effect of hormone replacement therapy (HRT) on periodontitis in postmenopausal women using a common data model (CD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fec9894f4a39b45da22671c7488b39e1
https://pubmed.ncbi.nlm.nih.gov/36468484
https://pubmed.ncbi.nlm.nih.gov/36468484
Publikováno v:
The Korean Journal of Malacology. 29:65-76
We investigated the gametogenic cycle and spawning seasons of the male Chlamys (Azumapecten) farreri nipponensis by qualitative and quantitative analyses, and also the size at 50% of group sexual maturity was calculated by the data of first sexual ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f805ef0d0eb2b1163e591ade77b70a3
https://doi.org/10.9710/kjm.2013.29.1.65
https://doi.org/10.9710/kjm.2013.29.1.65
Autor:
Deok-Hyung Lee, Rak-Hwan Kim, S.Y. Yoo, Jeonghyun Baek, Jung-A Choi, K.-M. Chung, E. S. Jung, Il-Goo Kim, Ki-Yeol Park, Soon-Moon Jung, Soomin Ahn, Byung-ki Kim, J.H. Hwang, Jihoon Cha, JiYeon Ku, Eun-hong Lee, S. S. Paak, Y. W. Cho, Min-Sang Kim, D. Park, J.S. Yoon, Jae-Hak Kim, T. Matsuda, Hyoji Choi, Hye-Lan Lee, Sungho Park, Jisu Kim, B. U. Yoon, H. K. Kang, Sang-Don Nam, Jun-Bum Lee, Nae-In Lee
Publikováno v:
Publons
CVD-Ru represents a critically important class of materials for BEOL interconnects that provides Cu reflow capability. The results reported here include superior gap-fill performance, a solution for plausible integration issues, and robust EM / TDDB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22f458c520ee4ee669c5ab0f102c828b
https://doi.org/10.1109/iedm.2014.7047153
https://doi.org/10.1109/iedm.2014.7047153
Autor:
Sung‐Bun Bae, Dae‐Youn Kim, Changmin Jeon, Chun Soo Lee, Ki-Yeol Park, Jae-Hoon Lee, Hyun-Ick Cho, Jong-Lam Lee, Jung-Hee Lee
Publikováno v:
physica status solidi (c). :2351-2354
We report on a metal–insulator–semiconductor AlGaN/GaN heterostructure field-effect transistor (MIS-HFET) using Al2O3 simultaneously for channel passivation layer and as a gate insulator which was deposited by plasma enhanced atomic layer deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4df5dcac9ca0dfca9f3152029b33ce5a
https://doi.org/10.1002/pssc.200303437
https://doi.org/10.1002/pssc.200303437
Autor:
Sung-Ho Hahm, Jung-Hee Lee, Ho Won Jang, Jong-Lam Lee, Doo-Hyeb Youn, Kyu-Seok Lee, Ki-Yeol Park, Hyung Koun Cho, Myoung-Bok Lee, Jae-Hoon Lee, Changmin Jeon, Sung-Bum Bae, Young-Hyun Lee
Publikováno v:
physica status solidi (c). :2006-2009
Undoped GaN films for high electromechanical coefficient were grown by controlling the size of nucleation sites through a special two step growth method. The film grown by this sequence exhibited the sheet resistance of up to 109 Ω/sq with mirror-li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d47a5b4f165f3d8e48aaa90e3782b13
https://doi.org/10.1002/pssc.200303366
https://doi.org/10.1002/pssc.200303366
Autor:
Daeyun Kim, J. H. Yun, Jung-In Hong, Eun-hong Lee, Jonghae Kim, Deok-Hyung Lee, T. Matsuda, B. H. Kwon, Ki-Yeol Park, K. H. Han, Nae-In Lee, Jeonghyun Baek, Y. W. Cho, Jun-Bum Lee, Seungwook Choi, Sang-Don Nam, T. J. Yim, B. U. Yoon, H. K. Kang, Byung-ki Kim, S. Choi, Soomin Ahn, Hye-Lan Lee, Il-Goo Kim, Jihoon Cha, Eric S. Chung
Publikováno v:
2013 IEEE International Electron Devices Meeting.
It is possible to overcome Cu void issues beyond 10nm node device by adapting CVD-Ru liner instead of conventional PVD Ta liner. However, CVD Ru liner integration degrades TDDB performance without optimizing its scheme. In this paper, superior gap-fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c635591d3b6dd2b7541c60be07394fc4
https://doi.org/10.1109/iedm.2013.6724715
https://doi.org/10.1109/iedm.2013.6724715
Autor:
Jong-Ho Bae, Ki-Yeol Park, Jai-Kwang Shin, Jongmin Shin, Jong-Ho Lee, Sun-Kyu Hwang, Hyuck-In Kwon, Jong-Bong Ha, Hyoji Choi, Jongseob Kim, Chan Hyeong Park, Kwang-Seok Seo, Jong-Bong Park, U-In Chung, Jae-joon Oh
Publikováno v:
2013 IEEE International Electron Devices Meeting.
Trap-related transient characteristics and RTN in p-GaN gate HEMT were characterized, for the first time to our knowledge. Current conduction mechanism in DC IG is explained based on proposed model. Hopping conduction mechanism is responsible for IG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d38833388264a412cfed4ab6d9c6b8f6
https://doi.org/10.1109/iedm.2013.6724733
https://doi.org/10.1109/iedm.2013.6724733
Autor:
Seog Moon Choi, Won Kyu Jeung, Sung Yi, Young Yoon, Hyun-Jun Kim, Suk Youn Hong, Sung Jun Lee, Ki Yeol Park, Sang Hyun Shin
Publikováno v:
2007 Proceedings 57th Electronic Components and Technology Conference.
A new silicon based multi chip white LED PKG for high power application is designed, fabricated and tested. The package is composed of Al layer coated reflector cup, silicon base which has micro through via hole for interconnection, and micro lens. C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7276f76c7091c7792d2badd62b7d19dc
https://doi.org/10.1109/ectc.2007.373876
https://doi.org/10.1109/ectc.2007.373876
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24:1303
A thermally stable AlGaN∕GaN heterostructure field-effect transistor (HFET) using an iridium oxide (IrO2) gate contact was demonstrated, compared with conventionally used Pt Schottky contact. The Schottky barrier height of the Pt contact significan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e6ea1678c9889f645dcb27ae554a7ac
https://doi.org/10.1116/1.2200374
https://doi.org/10.1116/1.2200374