Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ki Ryung Nam"'
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 11, Pp n/a-n/a (2023)
Charge‐trapping tunnel field effect transistors (CT‐TFETs) are experimentally demonstrated, and their array operations are discussed for low‐power large‐scale neuromorphic applications. CT‐TFETs cointegrated with charge‐trapping metal–o
Externí odkaz:
https://doaj.org/article/c862d47ee9564b9fac49d11c55727b19
Publikováno v:
IEEE Access, Vol 11, Pp 30546-30554 (2023)
The effects of low net-doped region on the electrical performance of tunnel field-effect transistors (TFETs) are investigated using a TCAD simulation. Compared with previous studies, it is observed that the low net-doped region between the source and
Externí odkaz:
https://doaj.org/article/bb890980a718458bab3b7dfbad0169d3
Publikováno v:
Micromachines, Vol 12, Iss 11, p 1401 (2021)
In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of
Externí odkaz:
https://doaj.org/article/6f43c6382e7747d8b6ace45c84bd2542
Publikováno v:
Transactions on Electrical and Electronic Materials. 22:432-438
In this study, the effective electron diffusivity in a silicon nitride is extracted experimentally explaining the lateral charge migration in Silicon-Oxide-Nitride-Oxide-Silicon memory device whose charge trapping layer is formed continuously along t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cec2b690590e5454f9ddc79214b0a10f
https://doi.org/10.1007/s42341-021-00333-0
https://doi.org/10.1007/s42341-021-00333-0
Publikováno v:
Transactions on Electrical and Electronic Materials. 22:372-377
Retention characteristics of silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory are affected by properties such as energy level and spatial location. In this study, a model was presented that separately evaluated the bulk and interface tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9bb7283462e42016f095a48fb63634b
https://doi.org/10.1007/s42341-021-00313-4
https://doi.org/10.1007/s42341-021-00313-4
Publikováno v:
Micromachines
Micromachines, Vol 12, Iss 1401, p 1401 (2021)
Volume 12
Issue 11
Micromachines, Vol 12, Iss 1401, p 1401 (2021)
Volume 12
Issue 11
In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2caa5d98775201b5050825fed9a3225f
https://doi.org/10.3390/mi12111401
https://doi.org/10.3390/mi12111401