Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Ki Don Lee"'
Autor:
Rakesh Ranjan, Pavitra Ramadevi Perepa, Ki-Don Lee, Hokyung Park, Peter Kim, Ganesh Chakravarthy Yerubandi, Jon Haefner, Caleb Dongkyun Kwon, Min-Jung Jin, Wenhao Zhou, Hyewon Shim, Shinyoung Chung
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a8405c8d26cca958a0be8c94c4c1564
https://doi.org/10.1109/irps48203.2023.10118344
https://doi.org/10.1109/irps48203.2023.10118344
Autor:
Manisha Sharma, Hokyung Park, Yinghong Zhao, Ki-Don Lee, Liangshan Chen, Joonah Yoon, Rakesh Ranjan, Caleb Dongkyan Kwon, Hyewon Shim, Myung Soo Yeo, Shinyoung Chung, Jon Haefner
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa03ccd80186c6ca8d27ff32ad8f70af
https://doi.org/10.1109/irps48203.2023.10117774
https://doi.org/10.1109/irps48203.2023.10117774
Autor:
Yinghong Zhao, Ki-Don Lee, Manisha Sharma, Joonah Yoon, Rakesh Ranjan, Iqbal Mahmud, Caleb Dongkyan Kwon, Myung Soo Yeo
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f439e964677e2fb5104f10b098ab366e
https://doi.org/10.1109/irps48227.2022.9764461
https://doi.org/10.1109/irps48227.2022.9764461
Autor:
Md Iqbal Mahmud, Rakesh Ranjan, Ki-Don Lee, Pavitra Ramadevi Perepa, Caleb Dongkyun Kwon, Seungjin Choo, Kihyun Choi
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef24161496e305578b80c787e321605f
https://doi.org/10.1109/irps48227.2022.9764601
https://doi.org/10.1109/irps48227.2022.9764601
Publikováno v:
Applied Thermal Engineering. 153:379-389
Film cooling techniques have been widely applied to gas turbine engines to protect the components from hot combustion gas. In this study, the shape of the laidback fan-shaped hole with a lateral expansion angle of 10 degrees was optimized through the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cc4ebf3b7a9d53b7be6b0b663db5fd9
https://doi.org/10.1016/j.applthermaleng.2019.03.029
https://doi.org/10.1016/j.applthermaleng.2019.03.029
Autor:
Maihan Nguyen, Hyunchul Sagong, Mohammad Shahriar Rahman, Rakesh Ranjan, Ki-Don Lee, Susannah Laure Prater, Minhyo Kang, Caleb Dongkyun Kwon, Ahmed Shariq, Shamas Musthafa Ummer, Charles Briscoe Larow, Pavitra Ramadevi Perepa, Ashish Kumar Jha, Hwa-Sung Rhee, Iqbal Mahmud
Publikováno v:
IRPS
Reliability of Core and IO FinFET is extensively investigated with various process steps at Fin, Source/ Drain, sacrificial Gate-Metal, and High-Pressure D2 Anneal. By modulating the process knobs, we quantified the effect of oxide traps (at bulk or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8353026f93a67445c925c2a882169b61
https://doi.org/10.1109/irps46558.2021.9405134
https://doi.org/10.1109/irps46558.2021.9405134
Autor:
Timothy Basford, Charles Briscoe Larow, Rakesh Ranjan, Hyunchul Sagong, Gil Heyun Choi, Hwa-Sung Rhee, David J. Moreau, Pavitra Ramadevi Perepa, Maihan Nguyen, Ki-Don Lee, Minhyo Kang, Bong Ki Lee, Carolyn Cariss-Daniels, M. Shahriar Rahman, Colby Callahan
Publikováno v:
IRPS
Basic Reliability of IO FinFET is studied with various process options and extensive trap density investigation. It is observed that the NBTI margin on High Performance IO pFET is lowered by additional treatment to maintain the taller Fin profile. Tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a8c4110697aa876f94784c46bfcce66
https://doi.org/10.1109/irps45951.2020.9129066
https://doi.org/10.1109/irps45951.2020.9129066
Autor:
Shigenobu Maeda, Junghwan Park, Ki-Don Lee, Won-Woong Kim, Sanghyun Cho, Minho Kwon, Chaesung Kim, Byoung-Ho Kim, Moo-young Kim, Sunghun Yu, Joonhyung Lee, Donghee Yu, Gitae Jeong, Jong-Won Choi, Seungju Hwang, Choong jae Lee, Seung-Hyun Lim, Rakesh Ranjan, Seonghye Park, Il-Seon Ha, Myounkyu Park, Hyunjung Shin, Sang-il Jung
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
CMOS Image Sensor(CIS) products need higher voltage device and better analog characteristics than conventional SOC & Logic products. This work presents newly developed 14nm FinFET process with 2.xV high voltage FinFET device characteristics showing e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::500d233491cfb7728e184981d71206be
https://doi.org/10.1109/iedm19573.2019.8993567
https://doi.org/10.1109/iedm19573.2019.8993567
Autor:
Anuj Patel, Daniel Sawyer, Tae-Young Jeong, Zack Tran Mai, Steven English, Logan H. Brown, Ki-Don Lee, Yinghong Zhao, Quan Yuan, Jinseok Kim
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
The effect of Joule heating (JH) on electromigration (EM) was investigated using copper low-k interconnects. We found Black's empirical EM model works at a very wide stress conditions (I = 0.03 mA ∼ 3.5mA), where the temperature rise by JH ranges f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2abb374a30d9ea8ae212b1c2cb1d587b
https://doi.org/10.1109/irps.2017.7936344
https://doi.org/10.1109/irps.2017.7936344
Autor:
Jung-hyeon Kim, Se-hoon Oh, Yoon-Jong Song, Ki-Hyun Hwang, Jong-Han Kim, E. S. Jung, Sun-Kyu Hwang, Kwang-Pyuk Suh, S. S. Pyo, Jong-Il Park, H. T. Jung, Gitae Jeong, Gwan-Hyeob Koh, Seong-Geon Park, J R Kang, Ki-Don Lee, H. C. Shin, J. H. Lee, Kwan-Heum Lee
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We fabricated 8Mb 1T-1MTJ STT-MRAM macro embedded in 28nm CMOS logic platform by developing novel integration/stack/patterning technologies. MTJ memory cell array was successfully embedded into Cu backend without open fail and severe degradation of m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2c17b79280807b872bab4da341269b9
https://doi.org/10.1109/iedm.2016.7838491
https://doi.org/10.1109/iedm.2016.7838491