Zobrazeno 1 - 10 of 25 pro vyhledávání: '"Ki‑Yong Shin"'
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Akademický článek
A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
Autor: Walid Amir, Ju-Won Shin, Ki-Yong Shin, Jae-Moo Kim, Chu-Young Cho, Kyung-Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae-Woo Kim
Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Abstract The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps we
Externí odkaz: https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
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6
An Explicit Thermal Resistance Model Regarding Self-Heating Effect of AlGaN/GaN High Electron Mobility Transistor
Autor: Surajit Chakraborty, Ju Won Shin, Walid Amir, Ki Yong Shin, Tae Woo Kim
Publikováno v: Materials Science Forum. 1074:125-131
This paper introduced an accurate empirical model for the thermal resistance of a single-finger AlGaN-GaN high electron mobility transistor (HEMT) on three different substrates including Sapphire, SiC and Si. The model reckons the constant thermal co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c575dfe785174b9782cd6c27b0dfa182
https://doi.org/10.4028/p-ajv0ev
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7
Symmetric Dimethylarginine is a Promising Biomarker for the Early Detection of Age-Related Kidney Dysfunction in Zoo Felids
Autor: Soong-Hee Youn, Ahmed K. Efladl, Myung-Jin Chung, Eun Jung, Ki-Yong Shin, Hyeon-Joo Shin, Joon-Young Yang, Kwang-Seok Heo, Dong-Hee Chung, Jae-Hyuk Yim, Ji-Yoon Son, Eun-Joo Lee, Il-Hwa Hong, Kyu-Shik Jeong
Publikováno v: Acta Veterinaria. 72:408-418
Chronic renal failure is one of the leading causes of death in African lions, cheetahs, and tigers. Conventional methods to measure renal dysfunction include measuring serum creatinine and blood urea nitrogen (BUN). Symmetric dimethylarginine (SDMA)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e9cbdcd9b75a9a7636dc44d6fb257c4
https://doi.org/10.2478/acve-2022-0033
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8
A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
Autor: Kyungho Park, Jae-Moo Kim, Walid Amir, Tae-Woo Kim, Ki-Yong Shin, Hiroki Sugiyama, Chu-Young Cho, Takuya Hoshi, Takuya Tsutsumi, Hideaki Matsuzaki, Ju-Won Shin
Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Scientific Reports
The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60362455c4bce92f49e1b352eac53f6c
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
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10
Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity
Autor: Surajit Chakraborty, Walid Amir, Ju-Won Shin, Ki-Yong Shin, Chu-Young Cho, Jae-Moo Kim, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Hyuk-Min Kwon, Dae-Hyun Kim, Tae-Woo Kim
Publikováno v: Materials; Volume 15; Issue 23; Pages: 8415
We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobility transistors on three distinct substrates, including sapphire, SiC, and Si. This model considered both a linear and non-linear thermal resistance mo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38377ed4ae7029cb139af821eed46a86
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