Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Khutsishvili, E."'
Consecutive height series of Ha spectra in solar limb spicules taken on the 53 cm coronagraph of Abastumani Astrophysical Observatory at the heights of 3800-8700 km above the photosphere have been analyzed. The aim is to observe oscillatory phenomena
Externí odkaz:
http://arxiv.org/abs/0708.2057
Height series of H${\alpha}$ spectra in solar limb spicules obtained with the 53 cm coronagraph of the Abastumani Astrophysical Observatory are analyzed. Each height series covered 8 different heights beginning at 3800 km above the photosphere. The s
Externí odkaz:
http://arxiv.org/abs/astro-ph/0602534
Height series of Doppler observation at the solar limb (covering 3800 - 8700 km distance above the photosphere) in $H_{\alpha}$ spectral line obtained by big coronagraph of Abastumani Astrophysical Observatory \citep{khu} show the periodic spatial di
Externí odkaz:
http://arxiv.org/abs/astro-ph/0510435
Autor:
Khutsishvili, D. eldarex@yahoo.com, Khutsishvili, E.1, Kvernadze, T.1, Kulidzanishvili, V.1, Kakhiani, V.1, Sikharulidze, M.1
Publikováno v:
Astrophysics. Dec2015, Vol. 58 Issue 4, p567-574. 8p.
Autor:
Kvemadze, T., Kurkhuli, G., Kilosanidze, B., Kakauridze, G., Kulijanishvili, V., Khutsishvili, E., Khutsishvili, D.
Publikováno v:
ASP Conference Series; 2020, Vol. 526, p357-360, 4p
Akademický článek
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Akademický článek
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Autor:
Kekelidze, N. Kekelidze, Khutsishvili, E., Kekelidze, D., Kvirkvelia, B., Nadiradze, L., Sadradze, K.
There has been investigated the effect of nanometer size disordered regions in SixGe1–x and InPxAs1–x semiconductor alloys on the charge carriers mobility. An investigation has shown, that composition dependence of the mobility appears as a resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c56231ca9c310b5f064ef6647e99d03e
Minimization of impurities content in Si necessary for its application as semiconductor material is performed by using directional crystallization of metallurgical grade Si (n-MG-Si) with 98 wt. % Si purity without intermediate stages. After pulling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc8d572df475cf4f1318fe96a10dc522
Autor:
Khutsishvili, E.1 semicond41@mail.ru, Gabrichidze, L.1, Tsagareishvili, O.1, Kobulashvili, N.1
Publikováno v:
Inorganic Materials. Jun2009, Vol. 45 Issue 6, p599-601. 3p. 1 Chart, 2 Graphs.