Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Khushnudbek Sh. Saparov"'
Publikováno v:
Applied Sciences, Vol 13, Iss 10, p 6131 (2023)
In this paper, degradation effects, such as self-heating effect (SHE) and drain-induced barrier lowering (DIBL) effect in 2D MoS2-based MOSFETs are investigated through simulations. The SHE is simulated based on the thermodynamic transport model. The
Externí odkaz:
https://doaj.org/article/6009772bb97c4ff69bbf092bf3c7c168
