Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Khushabu Agrawal"'
Autor:
Vilas Patil, Sanat Ghosh, Amit Basu, Kuldeep, Achintya Dutta, Khushabu Agrawal, Neha Bhatia, Amit Shah, Digambar A. Jangade, Ruta Kulkarni, A. Thamizhavel, Mandar M. Deshmukh
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract Assembling atomic layers of van der Waals materials (vdW) combines the physics of two materials, offering opportunities for novel functional devices. Realization of this has been possible because of advancements in nanofabrication processes
Externí odkaz:
https://doaj.org/article/5115eb60f0ca451c998ffd262a46e0a2
Autor:
Khushabu Agrawal, Charul Bhatnagar
Publikováno v:
Journal of Electronic Imaging. 32
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d429b35dd0f07943a8420fd03962112
https://doi.org/10.1117/1.jei.32.2.023033
https://doi.org/10.1117/1.jei.32.2.023033
Autor:
Vilas S. Patil, Won Jong Yoo, Eun-Chel Cho, Junsin Yi, Matheus Rabelo, Fida Ali, Khushabu Agrawal
Publikováno v:
Current Applied Physics. 26:83-89
The HF treatment removes the native oxide and lays behind the dangling bonds over the Si surface which causes the increment in density of interface traps (Dit) through the direct deposition of high-k dielectric on Si. Here, we propose the facile meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a5ad9ace6d65fc36efc241840b5d104
https://doi.org/10.1016/j.cap.2021.03.019
https://doi.org/10.1016/j.cap.2021.03.019
Autor:
G.T. Chavan, Vilas S. Patil, Jinsu Park, Junsin Yi, Jaemin Kim, Geonju Yoon, Sangwoo Pae, Eun-Chel Cho, Khushabu Agrawal, Jinseok Kim
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:9826-9834
We report the effect of variation of the channel width-to-length aspect ratio on the negative bias stress instability and the impact of the source/drain contact resistance on the electrical properties of amorphous-InGaZnO (IGZO) thin-film transistor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c6ba9b238112bc4a3c252b664872451
https://doi.org/10.1007/s10854-020-03527-z
https://doi.org/10.1007/s10854-020-03527-z
Publikováno v:
Rare Metals. 40:1835-1843
The metal-organic-decomposed lanthanum cerium oxide (LaCeO2) solution was spin-coated on p-type Si substrate to form thin films. The method of microwave-assisted annealing was adopted to modify the surface properties of the deposited thin films. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa3196a3f3a798683b202dccd2368256
https://doi.org/10.1007/s12598-020-01380-x
https://doi.org/10.1007/s12598-020-01380-x
Autor:
Khushabu Agrawal, Charul Bhatnagar
Publikováno v:
2021 International Conference on Intelligent Technologies (CONIT).
Face recognition has received interest among researchers due to the model vulnerabilities towards adversarial threats, which are imperceptible to human eye. In this research, we proposed binary mask iterative method (BMIM). In this method, we generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::068c4e28a0a7950a12ea634fb9d46267
https://doi.org/10.1109/conit51480.2021.9498370
https://doi.org/10.1109/conit51480.2021.9498370
Publikováno v:
Optical Engineering. 60
Antireflection coatings (ARCs) on an optical substrate appear to be highly effective for reducing reflectance for optical and photovoltaic (PV) panel applications. In this perspective, we have prepared and investigated the performance of silica nanop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b71dbda9f813abd06b8234c82254611
https://doi.org/10.1117/1.oe.60.5.057101
https://doi.org/10.1117/1.oe.60.5.057101
Autor:
Vilas, Patil, Jihyun, Kim, Khushabu, Agrawal, Tuson, Park, Junsin, Yi, Nobuyuki, Aoki, Kenji, Watanabe, Takashi, Taniguchi, Gil-Ho, Kim
Publikováno v:
Nanotechnology. 32(32)
Two-dimensional (2D) molybdenum disulphide (MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e44450966d42052b5cc155c0f877a0ad
https://pubmed.ncbi.nlm.nih.gov/33845468
https://pubmed.ncbi.nlm.nih.gov/33845468
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
The PEALD deposited La 2 O 3 /ZrO2 bilayer high-k on with and without LaON passivated GaAs substrates were investigated. The structural and electrical properties of bilayered MOS capacitors were studied in detailed. The dielectric constant (k) of $=\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52bf9093d7c0d5c40c7a3f021558c521
https://doi.org/10.1109/edtm47692.2020.9117895
https://doi.org/10.1109/edtm47692.2020.9117895
Publikováno v:
Thin Solid Films. 654:30-37
The properties of the HfO2 ultra-thin films high-k gate stack deposited on surface passivated (GeON) germanium with three different orientations viz. Ge (100), Ge (110) and Ge (111) for CMOS applications have been studied. The effect of post depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::149dca4dd0f90bab8a1c972143a62f3d
https://doi.org/10.1016/j.tsf.2018.03.083
https://doi.org/10.1016/j.tsf.2018.03.083