Výsledky vyhledávání - "Khrypko, S. L."

Investigation the Structures ZnO:Al/SiOx/PorSi/p-Si/Al

Autor: Kidalov, V. V., Dyadenchuk, A. F., Khrypko, S. L., Khrypko, O. S.

Publikováno v: Physics and Chemistry of Solid State; Vol 18, No 2 (2017); 180-183
Фізика і хімія твердого тіла; Vol 18, No 2 (2017); 180-183

Was investigated the luminescent properties of the system ZnO:Al/SiO2/PorSi/Si, which was formed by the method of spray pyrolysis. The shift of the photoluminescence intensity at wavelengths of 350 - 450 nm happen due to the introduction of ZnO in po

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=vasylstefany::a12988fec65e8cf71dd8d4a9633e6994
http://journals.pu.if.ua/index.php/pcss/article/view/2293

Zobrazit plný text záznamu

Akademický článek

Impact of Defects on Quality Contact Systems for Photoelectric Converters.

Autor: Nebesniuk, O. Y., Nikonova, Z. A., Nikonova, A. A., Khrypko, S. L.

Publikováno v: Journal of Nano- & Electronic Physics; 2019, Vol. 11 Issue 5, p1-5, 5p

Zobrazit plný text záznamu

Akademický článek

Entropy of Cluster System in Silicon Melt.

Autor: Khrypko, S. L., Golovko, Oleksandr K.

Publikováno v: Journal of Nano- & Electronic Physics; 2018, Vol. 10 Issue 2, p1-5, 5p

Zobrazit plný text záznamu

Akademický článek

Searching for Order Parameter of Low-temperature Phase Transitions in Divalent Nitrates.

Autor: Kolomoets, A. G., Khrypko, S. L.

Publikováno v: Journal of Nano- & Electronic Physics; 2019, Vol. 11 Issue 4, p1-3, 3p

Zobrazit plný text záznamu

Akademický článek

Modeling of Etching Nano-surfaces of Indium Phosphide.

Autor: Khrypko, S. L., Kidalov, V. V., Kolominska, E. V.

Publikováno v: Journal of Nano- & Electronic Physics; 2015, Vol. 7 Issue 1, p01003-1-01003-3, 3p

Zobrazit plný text záznamu

Modeling of etching nano-surfaces of indium phosphide

Autor: Khrypko, S. L., Valeriy Kidalov, Kolominska, E. V.

Publikováno v: Scopus-Elsevier

This paper describes a mechanism for obtaining a regular porous structure InP, which is to use the method of photoelectrochemical etching. Through the use of simulation etching at the nanoscale, it is possible to get a regular uniform grid of nanopor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b0b3ab250f38b15c090c0f6f7bfe02a6
http://www.scopus.com/inward/record.url?eid=2-s2.0-84927144817&partnerID=MN8TOARS