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High quality thin film p-n junction diodes with high rectification ratios and low ideality factors have been fabricated from metal oxides, such as amorphous oxide semiconductors (AOSs), and characterized. Plasma treatment of interfaces has been demon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a656d4d57d68e339342124b35e75dded
https://www.repository.cam.ac.uk/handle/1810/349733
https://www.repository.cam.ac.uk/handle/1810/349733
Funder: Cambridge Trust; Id: http://dx.doi.org/10.13039/501100003343
There is a need for a good quality thin film diode using a metal oxide p–n heterojunction as it is an essential component for the realization of flexible large‐area electro
There is a need for a good quality thin film diode using a metal oxide p–n heterojunction as it is an essential component for the realization of flexible large‐area electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::527728d63d969830b691aa37c9659d56