Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Kholdoun Tork"'
Publikováno v:
France, N° de brevet: FR 2970589 (B1) WO/2012/098181 (A1). 2013, pp.N/A
HAL
HAL
Extension : 26/07/12; The invention concerns a memory device comprising at least one memory cell comprising: a first transistor (102) coupled between a first storage node (106) and a first resistance switching element (202) programmed to have a first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::865cc5138d45a13a32be978820e1eb1d
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00861516
https://hal-lirmm.ccsd.cnrs.fr/lirmm-00861516