Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Khivrych, V.I."'
Autor:
Dotsenko, Yu.P., Ermakov, V.M., Gorin, A.E., Khivrych, V.I., Kolomoets, V.V., Machulin, V.F., Panasjuk, L.I., Prokopenko, I.V., Sus', B.B., Venger, E.F.
Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects in n-Si(P) crystals doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::df753500996cb58701dd81adff66b3e1
http://dspace.nbuv.gov.ua/handle/123456789/117987
http://dspace.nbuv.gov.ua/handle/123456789/117987
Autor:
Gontaruk, O.M., Khivrych, V.I., Pinkovska, M.B., Tartachnyk, V.P., Olikh, Ya.M., Vernydub, R.M., Opilat, V.Ya.
Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while electroluminescence degradation occur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::8d78b2928467d4971246550ca2443738
http://dspace.nbuv.gov.ua/handle/123456789/118000
http://dspace.nbuv.gov.ua/handle/123456789/118000
Autor:
Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Lithovchenko, O.P., Lastovetsky, V.F., Sugakov, V.I., Dubovy, V.K.
Publikováno v:
Semiconductor Phys. Quant. Electron. Optoelectron. 4, 85-90 (2001)
Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of oxygen promotes taking a vac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0a48b3ed87de6b6fc3578c3d6317a59e
http://dspace.nbuv.gov.ua/handle/123456789/119250
http://dspace.nbuv.gov.ua/handle/123456789/119250
Akademický článek
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Publikováno v:
IEEE Ultrasonics Symposium, 2004; 2004, p1690-1690, 1p