New properties of boron-oxygen dimer defect in boron-doped Czochralski silicon.

Autor: Khirunenko, L. I., Sosnin, M. G., Duvanskii, A. V., Abrosimov, N. V., Riemann, H.

Publikováno v: Journal of Applied Physics; 10/7/2022, Vol. 132 Issue 13, p1-8, 8p

The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

Autor: Gusakov, V. E., Lastovskii, S.B., Murin, L. I., Tolkacheva, E.A., Khirunenko, L. I., Sosnin, M. G., Duvanskii, A.V., Markevich, Vladimir, Halsall, Matthew, Peaker, Anthony, Kolevatov, I, Ayedh, H.M., Monakhov, E. V., Svensson, B. G.

Publikováno v: Gusakov, V E, Lastovskii, S B, Murin, L I, Tolkacheva, E A, Khirunenko, L I, Sosnin, M G, Duvanskii, A V, Markevich, V, Halsall, M, Peaker, A, Kolevatov, I, Ayedh, H M, Monakhov, E V & Svensson, B G 2017, ' The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms ', Physica Status Solidi. A: Applications and Materials Science . https://doi.org/10.1002/pssa.201700261

New experimental and theoretical results on the silicon di-interstitial (I2) and itsinteractions with oxygen and carbon impurity atoms in Si crystals are reported. The electronic structure calculations indicate that I2 has an acceptor and a donor lev

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https://www.research.manchester.ac.uk/portal/en/publications/the-diinterstitial-in-silicon-electronic-properties-and-interactions-with-oxygen-and-carbon-impurity-atoms(bf32c5b3-6d4a-4f49-84bc-f7d680c4c96f).html

The Role of Tin in Reactions Involving Carbon Interstitial Atoms in Irradiated Silicon.

Autor: Khirunenko, L. I., Kobzar’, O. A., Pomozov, Yu. V., Sosnin, M. G., Tripachko, N. A.

Publikováno v: Semiconductors. Mar2003, Vol. 37 Issue 3, p288. 6p.

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Complexes of Self-Interstitials with Oxygen Atoms in Ge.

Autor: Khirunenko, L. I., Pomozov, Yu. V., Sosnin, M. G., Abrosimov, N. V., Riemann, H.

Publikováno v: AIP Conference Proceedings; 2014, Vol. 1583, p100-104, 5p, 3 Graphs