Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Khimmatali JURAEV"'
Autor:
Khimmatali JURAEV, Mardonbek KHAJIEV, Aleksandr KUTLIMRATOV, Abdumirkhakim AKHMEDOV, Dilmurad SAIDOV
Publikováno v:
Medžiagotyra (2024)
In this paper, the electrophysical characteristics of the 4H-SiC p-n junction created by low-temperature diffusion of aluminum were studied. Current-voltage (I-V) characteristics are analysed, and the current transport mechanisms in 4H-SiC p-n juncti
Externí odkaz:
https://doaj.org/article/4a67bb59a428486092dd456801af6c0d
Autor:
I. G. Atabaev, Khimmatali Juraev, Vyacheslav N. Giryansky, B. G. Atabaev, Dilmurad Saidov, Chin-Che Tin, Vadim A. Pak, Tojiddin M. Saliev
Publikováno v:
Materials Sciences and Applications. :1205-1211
The low temperature diffusion of Boron in bulk SiC crystals is investigated and simplified model of such diffusion is presented. The method of UV stimulated etching by aqueous solution of KOH is proposed and some experimental data on influence of def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0af8c8ab86d5efb2cb9e9cf80824c57c
https://doi.org/10.4236/msa.2011.29163
https://doi.org/10.4236/msa.2011.29163
Autor:
Dilmurad Saidov, Khimmatali Juraev, Victor Adedeji, Nilufar G. Saidkhanova, Chin C. Tin, E. N. Bakhranov, B. G. Atabaev, Iikham G. Atabaev, Tojiddin M. Saliev
Publikováno v:
Materials Sciences and Applications. :53-58
Nonequilibrium diffusion of Boron in 3C SiC was performed using a flow of carbon vacancies. The temperature of diffusion was 1150-1250℃ and concentration of Boron in doped area reached about 1019 to 1020 cm-3. It is shown that after thermal anneali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0084f7ec0bd696c800de3223f72f34ed
https://doi.org/10.4236/msa.2010.12010
https://doi.org/10.4236/msa.2010.12010