Application of stormwater mass–volume curve prediction for water quality-based real-time control in sewer systems

Autor: Duy Khiem Ly, Jean-Luc Bertrand-Krajewski, Guillaume Binet, Thibaud Maruéjouls

Publikováno v: Urban Water Journal
Urban Water Journal, Taylor & Francis, 2019, 16 (1), pp.11-20. ⟨10.1080/1573062X.2019.1611885⟩

Reducing emitted pollutant loads via combined sewer overflow (CSO) structures is important to protect receiving water bodies. This study implements two real-time control (RTC) strategies: water quality-based RTC (QBR) using mass–volume (MV) curves

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01c42922746a98916d04130fbf0c6a61
https://doi.org/10.1080/1573062x.2019.1611885

Evaluation of two statistical approaches for estimating pollutant loads at adjacent combined sewer overflow structures

Autor: Guillaume Binet, Thibaud Maruéjouls, Duy Khiem Ly, Jean-Luc Bertrand-Krajewski, Xavier Litrico

Publikováno v: Water Science and Technology
Water Science and Technology, IWA Publishing, 2018, 78 (3), pp.699-707. ⟨10.2166/wst.2018.346⟩
Proceedings of the 14th ICUD – International Conference on Urban Drainage
14th ICUD – International Conference on Urban Drainage
14th ICUD – International Conference on Urban Drainage, Sep 2017, Prague, France. pp.1477-1485

Quantifying pollutant loads from combined sewer overflows (CSOs) is necessary for assessing impacts of urban drainage on receiving water bodies. Based on data obtained at three adjacent CSO structures in the Louis Fargue catchment in Bordeaux, France

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3f02dc56cb3d8767be8b84a1d9bc06a
https://pubmed.ncbi.nlm.nih.gov/30208010

Comparison of Off-Axis Electron Holography and Junction Staining of TEM Sections for Dopant Anomaly Visualization

Autor: Sam Subramanian, Khiem Ly, Tony Chrastechy

Publikováno v: EDFA Technical Articles. 15:22-30

Off-axis electron holography is a TEM-based imaging technique that reveals dopant anomalies and junction profiles in semiconductor devices. This article explains how the method works and how it is being used to visualize transistor source-drain regio

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::55f89bc7d7611bb581b7d05ba2a76077
https://doi.org/10.31399/asm.edfa.2013-2.p022

Advanced Defect Characterization by STEM Analysis

Autor: Sam Subramanian, Raghaw Rai, Khiem Ly, Tony Chrastecky, Randy Mulder, Keith Harber

Publikováno v: EDFA Technical Articles. 10:20-28

Localizing defects in one-of-a-kind failures can take days, weeks, or even months, after which a detailed physical analysis is conducted to determine the root cause. TEM and STEM play complimentary roles in this process; TEM because of its superior s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6decb320db032ce1191462ebb8a1fe85
https://doi.org/10.31399/asm.edfa.2008-2.p020

Cross-Section Sample Preparation Method for Imaging Dopant Related Anomalies Using Scanning Probe Microscopy Techniques

Autor: Khiem Ly, Swaminathan Subramanian, Tony Chrastecky

Publikováno v: International Symposium for Testing and Failure Analysis.

Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ee7fb1c26e71151b9799b148688b82d6
https://doi.org/10.31399/asm.cp.istfa2014p0519