Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Khatik Bhagvan Pannalal"'
Autor:
Sudhir Kumar Sharma, Sudhir Kumar, Saurabh Porwal, M. Sultan M. Siddiqui, Khatik Bhagvan Pannalal
Publikováno v:
ISCAS
One read-write 8T SRAM cell with decoupled read port suffer data-dependent read bit line leakage, limiting VDDMIN of SRAMs in deep submicron technologies. This paper proposes a 10T SRAM cell in a typical sub-10nm FinFET technology with data-independe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a940914472e31ef92abdfcdf59e098c8
https://doi.org/10.1109/iscas.2019.8702335
https://doi.org/10.1109/iscas.2019.8702335
