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of 80
pro vyhledávání: '"Kharchenko, D. O."'
A model for gas bubble behavior in irradiated amorphous $U_3Si_2$ is generalized to take into account local influence of sinks for point defects and gas atoms as far as defect clustering resulting in growth of dislocation loops. A universality of bub
Externí odkaz:
http://arxiv.org/abs/2112.14111
Publikováno v:
Condens. Matter Phys., 2020, Vol.23, No 3, 33001
We perform a comprehensive study of noise-induced effects in a stochastic model of reaction-diffusion type, describing nano-structured thin films growth at condensation. We introduce an external flux of adsorbate between neighbour monoatomic layers c
Externí odkaz:
http://arxiv.org/abs/2009.14076
Autor:
Wu, L., Kharchenko, D. O., Kharchenko, V. O., Lysenko, O. B., Kupriienko, V., Kokhan, S., Shuda, I. A., Pan, R.
Publikováno v:
Condens. Matter Phys., 2020, vol. 23, No. 1, 13604
A generalized model to study dislocation loops growth in irradiated binary Zr-based alloys is presented. It takes into account temperature effects, efficiencies of loops to absorb point defects dependent on the loop size, an influence of locality of
Externí odkaz:
http://arxiv.org/abs/2003.02060
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Publikováno v:
Condens. Matter Phys., 2018, vol. 21, No. 4, 43001
In this article we study transitions from low-density states towards high-density states in bistable plasma-condensate systems. We take into account an anisotropy in transference of adatoms between neighbour layers induced by the electric field near
Externí odkaz:
http://arxiv.org/abs/1806.08526
Autor:
Kharchenko, D. O., Kharchenko, V. O., Ovcharenko, Y. M., Lysenko, O. B., Shuda, I. A., Wu, L., Pan, R.
Publikováno v:
Condens. Matter Phys., 2018, vol. 21, No. 1, 13002
We present a comprehensive study of voids formation, nucleation and growth in a prototype model of binary alloys subjected to irradiation by using a combined approach based on phase field and rate theories. It is shown that voids formation is caused
Externí odkaz:
http://arxiv.org/abs/1803.11408
Publikováno v:
Condens. Matter Phys., 2015, vol. 18, No. 2, 23003
Dislocation-assisted phase separation processes in binary systems subjected to irradiation effect are studied analytically and numerically. Irradiation is described by athermal atomic mixing in the form of ballistic flux with spatially correlated sto
Externí odkaz:
http://arxiv.org/abs/1506.03962
Publikováno v:
Condens. Matter Phys., 2014, vol. 17, No. 3, 33004
Analytical approaches describing non-Fickian diffusion in complex systems are presented. The corresponding methods are applied to the study of statistical properties of pyramidal islands formation with interacting adsorbate at epitaxial growth. Using
Externí odkaz:
http://arxiv.org/abs/1410.4171
Autor:
Kharchenko, V. O., Kharchenko, D. O.
Publikováno v:
Condens. Matter Phys., 2013, vol. 16, No. 3, 33001
We consider the dynamics of pattern formation in a system of point defects under sustained irradiation within the framework of the rate theory. In our study we generalize the standard approach taking into account a production of defects by elastic fi
Externí odkaz:
http://arxiv.org/abs/1309.6193
Autor:
Kharchenko, V. O., Kharchenko, D. O.
Publikováno v:
Condens. Matter Phys., 2011, vol. 14, No. 2, p. 23602:1-11
Two-level modeling for nanoscale pattern formation on silicon target by Ar$^+$ ion sputtering is presented. Phase diagram illustrating possible nanosize surface patterns is discussed. Scaling characteristics for the structure wavelength dependence ve
Externí odkaz:
http://arxiv.org/abs/1106.6256