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pro vyhledávání: '"Khansaa A. Ghazi"'
Autor:
M.A.F. Alkhawaldeh, Khansaa A. Ghazi, A.V. Belousov, N.I. Slipchenko, I.N. Gvozdevskiy, N.N. Chernyshov
Publikováno v:
2019 International Seminar on Electron Devices Design and Production (SED).
The article studies the photovoltaic effect in n-InSb at optical transitions between spin subzones of Landau levels for ultra-quantum limit. The geometry is considered when the polarization is perpendicular and the current is directed along the magne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7df4973f41fb675f7330d49e031795e
https://doi.org/10.1109/sed.2019.8798465
https://doi.org/10.1109/sed.2019.8798465
