Zobrazeno 1 - 10
of 122
pro vyhledávání: '"Khanin, Yu. N."'
Autor:
Vdovin, E. E., Greenaway, M. T., Khanin, Yu. N., Morozov, S. V., Makarovsky, O., Patanè, A., Mishchenko, A., Slizovskiy, S., Fal'ko, V. I., Geim, A. K., Novoselov, K. S., Eaves, L.
Publikováno v:
Communications Physics volume 6, Article number: 159 (2023)
Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity
Externí odkaz:
http://arxiv.org/abs/2307.01757
Autor:
Greenaway, M. T., Vdovin, E. E., Ghazaryan, D., Misra, A., Mishchenko, A., Cao, Y., Wang, Z., Wallbank, J. R., Holwill, M., Khanin, Yu. N., Morozov, S. V., Watanabe, K., Taniguchi, T., Makarovsky, O., Fromhold, T. M., Patanè, A., Geim, A. K., Fal'ko, V. I., Novoselov, K. S., Eaves, L.
Publikováno v:
Communications Physics 1, 94 (2018)
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant
Externí odkaz:
http://arxiv.org/abs/1810.01312
Autor:
Khanin, Yu. N.1 (AUTHOR), Vdovin, E. E.1 (AUTHOR), Morozov, S. V.1 (AUTHOR), Novoselov, K. S.2 (AUTHOR) vdov62@yandex.ru
Publikováno v:
JETP Letters. Sep2023, Vol. 118 Issue 6, p433-438. 6p.
Publikováno v:
Physical Review B 79 (2009) 193311
We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that become bound in the close vicinity of the dot. The presence of these holes
Externí odkaz:
http://arxiv.org/abs/0907.1454
Autor:
Vdovin, E. E., Khanin, Yu. N., Makarovsky, O., Patane, A., Eaves, L., Henini, M., Mellor, C. J., Benedict, K. A., Airey, R.
We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magneti
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703614
We use magnetotunneling spectroscopy to observe the spin splitting of the ground state of an X-valley-related Si-donor impurity in an AlAs barrier. We determine the absolute magnitude of the effective Zeeman spin splitting factors of the impurity gro
Externí odkaz:
http://arxiv.org/abs/cond-mat/0502266
Autor:
Vdovin, E. E., Khanin, Yu. N., Veretennikov, A. V., Levin, A., Patane, A., Dubrovskii, Yu. V., Eaves, L., Main, P. C., Henini, M., Hill, G.
We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The images reveal clearly the elliptical symmetr
Externí odkaz:
http://arxiv.org/abs/cond-mat/0106656
Autor:
Novoselov, K. S., Dubrovskii, Yu. V., Sablikov, V. A., Ivanov, D. Yu., Vdovin, E. E., Khanin, Yu. N., Tulin, V. A., Esteve, D., Beaumont, S.
Nonlinear electron transport in normally pinched-off quantum wires was studied. The wires were fabricated from AlGaAs/GaAs heterostructures with high-mobility two-dimensional electron gas by electron beam lithography and following wet etching. At cer
Externí odkaz:
http://arxiv.org/abs/cond-mat/0003509
Autor:
Khanin, Yu. N.1 (AUTHOR), Vdovin, E. E.1 (AUTHOR) vdov62@yandex.ru
Publikováno v:
Semiconductors. Nov2021, Vol. 55 Issue 11, p835-839. 5p.
Publikováno v:
JETP Letters. Sep2021, Vol. 114 Issue 6, p332-336. 5p.