Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Khang June, Lee"'
Publikováno v:
Nano Research. 14:1305-1310
Two-dimensional (2D) materials have recently provided a new perspective on optoelectronics because of their unique layered structure and excellent physical properties. However, their potential use as optoelectric devices has been limited by the trade
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6664038aa11bea2b7a6cf0c24ea3a217
https://doi.org/10.1007/s12274-020-3154-5
https://doi.org/10.1007/s12274-020-3154-5
Autor:
Junghoon Park, Khang June Lee, Sung-Yool Choi, Hamin Park, Kyoungsik Yu, Gwang Hyuk Shin, Ho Jin Kim
Publikováno v:
ACS Applied Materials & Interfaces. 12:38563-38569
Negative photoconductivity (NPC), a reduction in photoconductivity under light illumination, could provide low power consumption and high-speed frequency response. The NPC has been generally observed in low-dimensional materials, which can be easily
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::424d40449e40ea5ed468f48468c4c116
https://doi.org/10.1021/acsami.0c09960
https://doi.org/10.1021/acsami.0c09960
Publikováno v:
Nano Letters. 20:5741-5748
Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges. In this study, a high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34cf49fc96739b0d7576dd89a869ff68
https://doi.org/10.1021/acs.nanolett.0c01460
https://doi.org/10.1021/acs.nanolett.0c01460
Publikováno v:
Nano Research. 13:576-582
Stacking of atomically thin layers of two-dimensional materials has revealed extraordinary physical phenomena owing to van der Waals (vdW) interaction at the interface. However, most of the studies focused on the transition metal dichalcogenide (TMD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ea253abe5860eff3d77b2e0e44008cf
https://doi.org/10.1007/s12274-020-2658-3
https://doi.org/10.1007/s12274-020-2658-3
Autor:
Dong Sik Oh, Jun Sung Kim, Yang-Kyu Choi, Gwang Hyuk Shin, Khang June Lee, Sung-Yool Choi, Eun-Su An, Hyeok Jun Jin, Cheolmin Park, Geon-Beom Lee
Publikováno v:
ACS Applied Materials & Interfaces. 12:5106-5112
This work demonstrates a high-performance and hysteresis-free field-effect transistor based on two-dimensional (2D) semiconductors featuring a van der Waals heterostructure, MoS2 channel, and GaS gate insulator. The transistor exhibits a subthreshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c41812a48198aab9b04c1575721a7ae
https://doi.org/10.1021/acsami.9b20077
https://doi.org/10.1021/acsami.9b20077
Autor:
Hamin Park, Seung-Hee Lee, Seunghyup Yoo, Dong Sik Oh, Sung-Yool Choi, Dae Yool Jung, Khang June Lee
Publikováno v:
ACS Applied Materials & Interfaces. 12:4749-4754
Two-dimensional (2D) materials have attracted significant attention because of their outstanding electrical, mechanical, and optical characteristics. Because all of the conducting (graphene), semiconducting (molybdenum disulfide, MoS2), and insulatin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d8f61fca80cd56ee8f84b90764eaee9
https://doi.org/10.1021/acsami.9b18945
https://doi.org/10.1021/acsami.9b18945
Autor:
Yang-Kyu Choi, Khang June Lee, Gwang Hyuk Shin, Geon-Beom Lee, Sung-Yool Choi, Junghoon Park, Kyoungsik Yu, Hyun Bae Jeon
Publikováno v:
ACS Applied Materials & Interfaces. 11:7626-7634
In this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS2. Mechanically exfoliated MoS2 flakes are transferred onto a Si layer; the resulting Si–MoS2 p–n photodiode shows excellent perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55b8f5c6e0d766dee29e529fd42dae75
https://doi.org/10.1021/acsami.8b21629
https://doi.org/10.1021/acsami.8b21629
Autor:
Ho Jin, Kim, Khang June, Lee, Junghoon, Park, Gwang Hyuk, Shin, Hamin, Park, Kyoungsik, Yu, Sung-Yool, Choi
Publikováno v:
ACS applied materialsinterfaces. 12(34)
Negative photoconductivity (NPC), a reduction in photoconductivity under light illumination, could provide low power consumption and high-speed frequency response. The NPC has been generally observed in low-dimensional materials, which can be easily
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3ec4f239cf7806e2c6bc2ed25cb99eec
https://pubmed.ncbi.nlm.nih.gov/32846468
https://pubmed.ncbi.nlm.nih.gov/32846468
Publikováno v:
Nano letters. 20(8)
Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges. In this study, a high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::09ae765a820eead5ea9df511bd48665a
https://pubmed.ncbi.nlm.nih.gov/32589036
https://pubmed.ncbi.nlm.nih.gov/32589036
Autor:
Gwang Hyuk, Shin, Geon-Beom, Lee, Eun-Su, An, Cheolmin, Park, Hyeok Jun, Jin, Khang June, Lee, Dong Sik, Oh, Jun Sung, Kim, Yang-Kyu, Choi, Sung-Yool, Choi
Publikováno v:
ACS applied materialsinterfaces. 12(4)
This work demonstrates a high-performance and hysteresis-free field-effect transistor based on two-dimensional (2D) semiconductors featuring a van der Waals heterostructure, MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::768a54ed8abeb76dad31d187cec631d4
https://pubmed.ncbi.nlm.nih.gov/31898448
https://pubmed.ncbi.nlm.nih.gov/31898448