Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Khandakar Nusrat Islam"'
Autor:
Khandakar Nusrat Islam, L. D. Ludeking, Andrey D. Andreev, Salvador Portillo, Ahmed M. N. Elfrgani, Edl Schamiloglu
Publikováno v:
IEEE Transactions on Electron Devices. 69:1380-1388
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbf34d98acb7f1e56d5a3d9dd26e476f
https://doi.org/10.1109/ted.2022.3140408
https://doi.org/10.1109/ted.2022.3140408
Publikováno v:
2021 IEEE International Conference on Plasma Science (ICOPS).
In general, HPM systems currently being developed use oscillators as their RF source. These systems operate at a fixed frequency and are not readily tunable. In contrast to oscillators, a broadband amplifier has the frequency agility necessary to max
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ece888efebeebbdd97492edd3bfe969
https://doi.org/10.1109/icops36761.2021.9588390
https://doi.org/10.1109/icops36761.2021.9588390
Autor:
Andrey D. Andreev, Ahmed Elfrgani, Edl Schamiloglu, Khandakar Nusrat Islam, Salvador Portillo
Publikováno v:
2021 IEEE International Conference on Plasma Science (ICOPS).
We present a novel concept for generating multibeams (multiple electron beams) with different energies from a single cathode stalk at a single potential using two nested magnetically insulated coaxial diodes (MICDs). Particle-in-cell (PIC) simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddb8faaca0d0b0b17fba849cc4726887
https://doi.org/10.1109/icops36761.2021.9588366
https://doi.org/10.1109/icops36761.2021.9588366
Publikováno v:
2018 IEEE International Conference on Plasma Science (ICOPS).
Generating microwaves using metamaterial (MTM) structures requires a negative index waveguide interacting with an electron beam. A double negative MTM (DNG-MTM) structure is necessary to produce propagating wave inside a standard waveguide. In previo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71deb455e92b9b7f9d87dca1421fbf53
https://doi.org/10.1109/icops35962.2018.9575523
https://doi.org/10.1109/icops35962.2018.9575523
Publikováno v:
16th International Workshop on Physics of Semiconductor Devices.
A new heterostructure based on Al x In 1-x N/GaN high electron mobility transistor (HEMT) on SiC substrate has been proposed for high frequency, where it offers the best performance in comparison to other two heterostructures like on Al x Ga 1-x N/Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d1d2c4821936247bd19fadaf2298484
https://doi.org/10.1117/12.927259
https://doi.org/10.1117/12.927259