Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Khandagale, S. S."'
Autor:
Dongale, T. D., Khot, K. V., Mohite, S. V., Khandagale, S. S., Shinde, S. S., Moholkar, A. V., Rajpure, K. Y., Bhosale, P. N., Patil, P. S., Gaikwad, P. K., Kamat, R. K.
In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present ana
Externí odkaz:
http://arxiv.org/abs/1602.08262
Autor:
Dongale, T. D., Khot, K. V., Mohite, S. V., Khandagale, S. S., Shinde, S. S., Patil, V. L., Vanalkar, S. A., Moholkar, A. V., Rajpure, K. Y., Bhosale, P. N., Patil, P. S., Gaikwad, P. K., Kamat, R. K.
Publikováno v:
Journal of Nano- & Electronic Physics; 2016, Vol. 8 Issue 4, p1-4, 4p
