Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Khamsouk Kingkeo"'
Autor:
Pankaj B. Shah, Dmitry Ruzmetov, James Weil, A. Glen Birdwell, Tony Ivanov, Khamsouk Kingkeo, Kevin G. Crawford, Mahesh R. Neupane
Publikováno v:
IEEE Transactions on Electron Devices. 67:2270-2275
Wereport on the fabrication and measurement of hydrogen-terminated diamond field-effect transistors (FETs) incorporating V2O5 as a surface acceptor material to induce transfer doping. Comparing a range of gate lengths down to 50 nm, we observe invers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69020314235ed34c5b5ea86e2f487f74
https://doi.org/10.1109/ted.2020.2989736
https://doi.org/10.1109/ted.2020.2989736
Autor:
A. G. Birdwell, Khamsouk Kingkeo, Mahesh R. Neupane, James Weil, Leonard M. De La Cruz, Dmitry Ruzmetov, Pankaj B. Shah, Tony Ivanov
Publikováno v:
Radar Sensor Technology XXV.
Army Research Laboratory (ARL) is developing radio frequency (RF) field-effect-transistors (FETs) on hydrogen-terminated, single-crystal diamond surfaces. By employing advanced fabrication methods, we achieve state-of-the-art device performance with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69ae371912f34eb3b82dda66c0393ff0
https://doi.org/10.1117/12.2587818
https://doi.org/10.1117/12.2587818
Publikováno v:
2018 IEEE/MTT-S International Microwave Symposium - IMS.
Initial results for diamond RF transistor technology are presented. Field Effect Transistors (FETs) were fabricated with gate lengths $(\mathbf{L}_{\mathrm{g}})$ ranging from $\mathbf{4}\pmb{\mu}\mathbf{m}$ to 50nm. The FETs have total gate width $(\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1006537b8299f9a640050e1c019b0cd
https://doi.org/10.1109/mwsym.2018.8439521
https://doi.org/10.1109/mwsym.2018.8439521
Autor:
Khamsouk Kingkeo, H. Alfred Hung, Edward Viveiros, John Penn, Y. Ethan Wang, Mathew Biedka, Ali M. Darwish
Publikováno v:
2018 IEEE/MTT-S International Microwave Symposium - IMS.
This paper presents a microwave implementation of the novel sequentially-switched delay line (SSDL) for simultaneous transmit and receive (STAR) applications. The circuit is nonreciprocal and non-magnetic and is implemented in a high frequency GaN MM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bba335ca6c8744b10c908dbbc9eefb60
https://doi.org/10.1109/mwsym.2018.8439451
https://doi.org/10.1109/mwsym.2018.8439451
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 59:3419-3427
This paper presents the first comprehensive study of the linearity characteristics of GaN/SiC high-electron mobility transistors (HEMTs) at millimeter-wave (mmW). Similar size devices from three sources are compared using AM-AM, AM-PM, two-tone, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29458c4a24aa11cde21a748880c1ee46
https://doi.org/10.1109/tmtt.2011.2171986
https://doi.org/10.1109/tmtt.2011.2171986
Autor:
Frank J. Crowne, Ali M. Darwish, Benjamin D. Huebschman, Neil Goldsman, Edward Viveiros, Khamsouk Kingkeo
The research describes an investigation into an observed phenomenon believed to be correlated with catastrophic device failure cause by the breakdown in the gate structure in high power, high frequency GaN HEMTs. Several devices that were stressed on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6747ce4cccacc134a8991167462273b2
https://zenodo.org/record/1266778
https://zenodo.org/record/1266778
In this paper, a digital waveform system for evaluating the linearity characteristics of millimeter-wave GaN HEMT devices and MMICs is described. It is capable of generating and analyzing a wide range of waveforms. The linearity performance of a samp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12e952040d8db0f40bf32dd82ff1cc93
https://zenodo.org/record/1276321
https://zenodo.org/record/1276321
Publikováno v:
2009 IEEE Antennas and Propagation Society International Symposium.
The design of a K a -band coplanar waveguide slot-coupled patch antenna ESA with integrated MEMS phase shifters has been described above. The incorporation of MEMS phase shifters into the ESA design results in a compact, efficient uplink mechanism fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::860c98358e5d5d27d4ed95620b30fb94
https://doi.org/10.1109/aps.2009.5171614
https://doi.org/10.1109/aps.2009.5171614