Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Kham Man Niang"'
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 17, Pp n/a-n/a (2023)
Abstract High quality thin film p‐n junction diodes with high rectification ratios and low ideality factors have been fabricated from metal oxides, such as amorphous oxide semiconductors (AOSs), and characterized. Plasma treatment of interfaces has
Externí odkaz:
https://doaj.org/article/4a24cf584d5142d49b8a4c739ad22086
