Effects of the thickness on the properties of erbium-doped silicon-rich silicon oxide thin films

Autor: Blas Garrido, Jean-Louis Doualan, Olivier Jambois, Sébastien Cueff, Khalil Hijazi, Julien Cardin, Christophe Labbé, Richard Rizk

Publikováno v: physica status solidi (c)
physica status solidi (c), Wiley, 2011, E-MRS 2010 Spring Meeting – Symposium I: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications II • E-MRS 2010 Spring Meeting – Symposium J: Silicon-based Nanophotonics, 8 (3), pp.1027-1032. ⟨10.1002/pssc.201000390⟩
physica status solidi (c), 2011, E-MRS 2010 Spring Meeting – Symposium I: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications II • E-MRS 2010 Spring Meeting – Symposium J: Silicon-based Nanophotonics, 8 (3), pp.1027-1032. ⟨10.1002/pssc.201000390⟩

International audience; The present study examines the influence of the layer thickness on the emission of Er ions coupled to Si nanoclusters within a silica matrix obtained by magnetron co-sputtering at two typical temperatures (ambient and 500 °C.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1cdab6433572f4589d57da85f536c7e
https://hal.archives-ouvertes.fr/hal-01139274/document

Structural and optical characteristics of Er-doped SRSO layers deposited by the confocal sputtering technique

Autor: Larysa Khomenkova, Fabrice Gourbilleau, Richard Rizk, Khalil Hijazi, Julien Cardin

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures
Physica E: Low-dimensional Systems and Nanostructures, 2009, 41, pp.1067-1070. ⟨10.1016/j.physe.2008.08.048⟩
Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2009, 41, pp.1067-1070
Physica E: Low-dimensional Systems and Nanostructures, 2009, 41, pp.1067-1070
HAL
Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2009, 41, pp.1067-1070. ⟨10.1016/j.physe.2008.08.048⟩

International audience; Er-doped silicon-rich silicon oxide layers have been grown at 600 °C by magnetron co-sputtering of three confocal cathodes (Si, SiO2 and Er2O3) in pure argon plasma. The structural and optical properties of the layers were ex

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4012916a81025191630576a7947af684
https://cea.hal.science/cea-02415354/document

Efficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition

Autor: Larysa Khomenkova, Christophe Labbé, Khalil Hijazi, Jean-Louis Doualan, Richard Rizk, Sébastien Cueff, Olivier Jambois, Blas Garrido, Julien Cardin

Publikováno v: HAL
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2010, 108 (6), pp.064302 1-6. ⟨10.1063/1.3481375⟩
Journal of Applied Physics, American Institute of Physics, 2010, 108, pp.064302
Journal of Applied Physics, 2010, 108 (6), pp.064302. ⟨10.1063/1.3481375⟩

International audience; This study investigates the influence of the deposition temperature Td on the Si-mediated excitation of Er ions within silicon-rich silicon oxide layers obtained by magnetron cosputtering. For Td exceeding 200 °C, an efficien

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cda033e18893e5df8a1164c4b2df67ca
https://doi.org/10.1063/1.3481375

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Autor: Anthony J. Kenyon, Fabrice Gourbilleau, B. Garrido, Yonder Berencén, Khalil Hijazi, Richard Rizk, Olivier Jambois, M Wojdak

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2009, 106, pp.063526
Journal of Applied Physics, 2009, 106, pp.063526
Dipòsit Digital de la UB
Universidad de Barcelona

We have studied the current transport and electroluminescence properties of metal oxide semiconductor MOS devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d48dadf18a031997c9f433712d2a767
http://hdl.handle.net/2445/32209