Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Khalil El Hajjam"'
Autor:
Sivaramakrishnan Ramesh, Arjun Ajaykumar, Lars-Åke Ragnarsson, Laurent Breuil, Gabriel Khalil El Hajjam, Ben Kaczer, Attilio Belmonte, Laura Nyns, Jean-Philippe Soulié, Geert Van den bosch, Maarten Rosmeulen
Publikováno v:
Micromachines, Vol 12, Iss 9, p 1084 (2021)
We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements. We investigated the impact of diff
Externí odkaz:
https://doaj.org/article/b5870bd32d664f249b9d66f867e19dcf
Autor:
Ludovic Goux, R. Delhougne, Gouri Sankar Kar, Sven Van Elshocht, Christophe Detavernier, Wouter Devulder, Matty Caymax, Jan Willem Maes, Gabriel Khalil El Hajjam, Jean-Marc Girard, Karl Opsomer, Ali Haider, Johan Swerts, Shaoren Deng, Annelies Delabie, Michael Eugene Givens
Publikováno v:
MATERIALS ADVANCES
The ovonic threshold switch (OTS) selector based on the voltage snapback of amorphous chalcogenides has received tremendous attention as it provides several desirable characteristics such as bidirectional switching, a controllable threshold voltage,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e62b93c2d6d50a27c2fe78d325d76509
https://hdl.handle.net/1854/LU-8706073
https://hdl.handle.net/1854/LU-8706073
Autor:
Khalil El Hajjam, Olivier Salicio, Bernard Pelissier, Rémi Vallat, R. Gassilloud, Christophe Vallée, Gabriel Molas
Publikováno v:
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2019, 37 (2), pp.020918. ⟨10.1116/1.5049361⟩
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2019, 37 (2), pp.020918. ⟨10.1116/1.5049361⟩
Journal of Vacuum Science & Technology A, 2019, 37 (2), pp.020918. ⟨10.1116/1.5049361⟩
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2019, 37 (2), pp.020918. ⟨10.1116/1.5049361⟩
A selective deposition process for bottom-up approach was developed in a modified plasma enhanced atomic layer deposition (PEALD) sequence. As a case study, a very standard PEALD TiO2 using organo-amine precursor and O2 plasma is chosen. The metal ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49a2506769b0bf705ed78807b8304b04
https://hal.univ-grenoble-alpes.fr/hal-02108939/file/vallat2019.pdf
https://hal.univ-grenoble-alpes.fr/hal-02108939/file/vallat2019.pdf
Autor:
Carlo Cagli, Khalil El Hajjam, Alexandre Levisse, L Tillie, Cecile Nail, Gabriel Molas, Jean-Francois Nodin, Gilbert Sassine, Etienne Nowak, Diego Alfaro Robayo, Elisa Vianello, Mathieu Bernard
Publikováno v:
International Reliability Physics Symposium (IRPS)
2018 IEEE International Reliability Physics Symposium (IRPS)
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingame, United States. pp.P-MY.2-1-P-MY.2-5, ⟨10.1109/IRPS.2018.8353675⟩
IRPS
2018 IEEE International Reliability Physics Symposium (IRPS)
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingame, United States. pp.P-MY.2-1-P-MY.2-5, ⟨10.1109/IRPS.2018.8353675⟩
IRPS
International audience; In this paper, programming operations are optimizedfor low energy consumption and short latency time applicationsin RRAM kb arrays. Origin of consumption (role of pulse’stime, programming current and voltage in SET and RESET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a92afd8cf2e27acbba286a7eda928df
https://hal-cea.archives-ouvertes.fr/cea-02187729
https://hal-cea.archives-ouvertes.fr/cea-02187729
Autor:
Mohamed Amine Bounouar, Abdelkader Souifi, Francis Calmon, Dominique Drouin, Serge Ecoffey, Nicolas Baboux, Khalil El Hajjam, Laurent Francis, Etienne Puyoo, Marc Guilmain
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (9), pp.2298-3003. ⟨10.1109/TED.2015.2452575⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (9), pp.2298-3003. ⟨10.1109/TED.2015.2452575⟩
The development of metallic single-electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions (TJs). These TJs should insure high-ON current, low-OFF current, and low capacitance. We propose an engineer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ebf11bbf8eb1588abb95a72b88a62fb
https://doi.org/10.1109/ted.2015.2452575
https://doi.org/10.1109/ted.2015.2452575
Autor:
Carlo Cagli, Gabriel Molas, Khalil El Hajjam, Clement Nguyen, Cecile Nail, Gilles Reimbold, Jean-Francois Nodin, Benoit Sklenard, S. Bernasconi, C. Charpin
Publikováno v:
2017 IEEE International Memory Workshop (IMW).
We present a novel study on the impact of the forming stage on RRAM reliability on multi-Kbit array. First we show how the forming stage dictates the CF radius and impacts on the Vset distribution even after long cycling. Then we show how the low fre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e51a3f4bf206621dbf8dd8176b0636
https://doi.org/10.1109/imw.2017.7939105
https://doi.org/10.1109/imw.2017.7939105
Autor:
C. Charpin, Gilles Reimbold, Gabriel Molas, Carlo Cagli, S. Bernasconi, Michel Harrand, Khalil El Hajjam, Jean Francois Nodin
Publikováno v:
2017 IEEE International Memory Workshop (IMW).
This paper focuses on the programming operation optimization of a HfO2-based Resistive RAM (RRAM) memory array for low power consumption application. We will show how the resistance window (RW) depends on the write/erase energy, and we will give dire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::047cb0109236511800ea1a63e8dcfd94
https://doi.org/10.1109/imw.2017.7939106
https://doi.org/10.1109/imw.2017.7939106
Publikováno v:
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2016, Vienna, Austria
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2016, Vienna, Austria
The development of metallic Single Electron Transistor (SET) is extremely related to the downscaling and the electrical properties of its tunnel junctions. These tunnel junctions should insure high ON current, low OFF current and low capacitance. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::080c586a289a73d9fd7f21da6eab0bcd
https://doi.org/10.1109/ulis.2016.7440092
https://doi.org/10.1109/ulis.2016.7440092
Akademický článek
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Publikováno v:
NANOARCH
2012 IEEE/ACM International Symposium on Nanoscale Architectures
2012 IEEE/ACM International Symposium on Nanoscale Architectures, Jul 2012, Amsterdam, France. pp.146-151, ⟨10.1145/2765491.2765518⟩
Scopus-Elsevier
2012 IEEE/ACM International Symposium on Nanoscale Architectures
2012 IEEE/ACM International Symposium on Nanoscale Architectures, Jul 2012, Amsterdam, France. pp.146-151, ⟨10.1145/2765491.2765518⟩
Scopus-Elsevier
Single Electron Transistors have the potential to be a very promising candidate for future computing architectures due to their low voltage operation and low power consumption. In this paper, we present a family of digital logic cells based on double
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e32a6cc864f8c9815f5a8be9e2d962a
https://doi.org/10.1145/2765491.2765518
https://doi.org/10.1145/2765491.2765518