Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Khalid EzzEldin Ismail"'
Autor:
George Anthony Sai-Halasz, Douglas A. Buchanan, Shih-Hsien Lo, Yuan Taur, Shalom J. Wind, Wei Chen, Hsing-Jen Wann, Hon-Sum Philip Wong, Khalid EzzEldin Ismail, R. Viswanathan, David J. Frank
Publikováno v:
Proceedings of the IEEE. 85:486-504
Starting with a brief review on 0.1-/spl mu/m (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bb9bd14151f642e0adfab427e447bec
https://doi.org/10.1109/5.573737
https://doi.org/10.1109/5.573737
Publikováno v:
Microelectronic Engineering. 35:257-260
Excellent improvement in the hole transport properties for SiGe heterostructures promises symmetric, higher speed, and lower power consumption circuits compared to conventional Si CMOS devices. Modulation-doped field effect transistors (MODFETs) grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d66433bd8416824608b3a46ec117f056
https://doi.org/10.1016/s0167-9317(96)00088-3
https://doi.org/10.1016/s0167-9317(96)00088-3
Publikováno v:
Microelectronic Engineering. 35:33-36
Nearly damage free etching of a high mobility Si SiGe heterostructure is obtained by using very low power reactive ion etching and precise end-point detection. Conductance versus wire width plots of 0.08 μm to 1 μm wide Si SiGe quantum well wires s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23fe02cd16eb7f5609020d7f416e9a3d
https://doi.org/10.1016/s0167-9317(96)00131-1
https://doi.org/10.1016/s0167-9317(96)00131-1
Publikováno v:
Physical Review B. 54:10604-10608
The electronic properties of Si/${\mathrm{Si}}_{0.7}$${\mathrm{Ge}}_{0.3}$ quantum-well wires fabricated by reactive ion etching are investigated. The width of the nonconducting layer produced by the dry-etch damage and surface depletion is determine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a49d6c707deddf1cad7b7d0138312efa
https://doi.org/10.1103/physrevb.54.10604
https://doi.org/10.1103/physrevb.54.10604
Publikováno v:
Physical Review B. 50:17383-17392
In GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As coupled four-ring and two-ring samples, large Aharonov-Bohm (AB) oscillations have been observed for magnetic fields 0B4.5 T. The oscillation spectrum changes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c951c570cdeb023c6442c12dff91d9d7
https://doi.org/10.1103/physrevb.50.17383
https://doi.org/10.1103/physrevb.50.17383
Publikováno v:
Semiconductor Science and Technology. 9:2005-2010
The era of integrated circuits based on SiGe heterojunction bipolar transistors arrived with the announcement of a 12-bit digital to analogue converter (DAC) fabricated using an analogue optimization of IBM's SiGe HBT technology. Medium-scale integra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95e26c63e2ee2115dd27fe8f95a3f1eb
https://doi.org/10.1088/0268-1242/9/11s/025
https://doi.org/10.1088/0268-1242/9/11s/025
Publikováno v:
Semiconductor Science and Technology. 9:882-885
Under certain biasing conditions, the intersubband energy separation in a quantum wire can match the optical phonon energy, thereby enhancing the scattering of charge carriers. We provide direct theoretical evidence that an anomalous negative differe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aa92b746b250bec86e542d030adc48c
https://doi.org/10.1088/0268-1242/9/5s/130
https://doi.org/10.1088/0268-1242/9/5s/130
Autor:
B. S. Meyerson, J Lutz, G. Stöger, F. Kuchar, Khalid EzzEldin Ismail, G. Bauer, G. Brunthaler
Publikováno v:
Semiconductor Science and Technology. 9:765-771
The energy loss rate of two-dimensional hot electrons has been studied in modulation-doped Si/SiGe heterostructures grown by ultrahigh-vacuum chemical vapour deposition using the damping of the amplitudes of Shubnikov-de Haas oscillations with applie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c69d9552acaab956cf8c43ed039f92
https://doi.org/10.1088/0268-1242/9/5s/100
https://doi.org/10.1088/0268-1242/9/5s/100
Autor:
G. Stöger, J Lutz, G. Bauer, Friedemar Kuchar, Bernard S. Meyerson, Khalid EzzEldin Ismail, G. Brunthaler
Publikováno v:
Physical Review B. 49:10417-10425
The energy-loss rate of hot carriers in several modulation-doped Si/${\mathrm{Si}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ge}}_{\mathit{x}}$ heterostructures has been studied. The Ohmic properties of the Si/${\mathrm{Si}}_{1\mathrm{\ensuremat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad1391e40b11b96cc5bfc59760c46d57
https://doi.org/10.1103/physrevb.49.10417
https://doi.org/10.1103/physrevb.49.10417
Publikováno v:
Semiconductor Science and Technology. 8:399-402
For the first time two experimental methods (DC and time-resolved measurements) were used to study the energy relaxation mechanism in a two-dimensional electron gas. The results are in good agreement with theoretical predictions and yield a constant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9281a6f1d65d94fc81fcffe351d26a4
https://doi.org/10.1088/0268-1242/8/3/016
https://doi.org/10.1088/0268-1242/8/3/016