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pro vyhledávání: '"Khaled Hebali"'
Performance Analysis of GaN/AlGaN/AlN/GaN MIS-MODFETs with High-κ as Gate Dielectric Insulator Layer
Publikováno v:
Transactions on Electrical and Electronic Materials. 24:250-257
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a747ec5a32e44bd69345fa7b0460f08f
https://doi.org/10.1007/s42341-023-00442-y
https://doi.org/10.1007/s42341-023-00442-y
