Zobrazeno 1 - 10
of 116
pro vyhledávání: '"Khaled Elgaid"'
Autor:
Moath Alathbah, Khaled Elgaid
Publikováno v:
Micromachines, Vol 13, Iss 11, p 2007 (2022)
In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch proc
Externí odkaz:
https://doaj.org/article/66b6381ee6274a99a7bf2c419d74ff4b
Autor:
Matthew D. Smith, Jerome A. Cuenca, Daniel E. Field, Yen-chun Fu, Chao Yuan, Fabien Massabuau, Soumen Mandal, James W. Pomeroy, Rachel A. Oliver, Michael J. Uren, Khaled Elgaid, Oliver A. Williams, Iain Thayne, Martin Kuball
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035306-035306-5 (2020)
GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using m
Externí odkaz:
https://doaj.org/article/8fedbae859214ba68c92f35c0dcab39c
Publikováno v:
IEEE Sensors Journal. 22:12307-12313
This work presents performance evaluation of GaN High Electron Mobility Transistor (HEMT) based ultraviolet (UV) detector on Si substrate. In addition to the fabrication and characterization, a systematic study is presented here using simulations ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::110801854b41181140de16244c396471
https://doi.org/10.1109/jsen.2022.3170653
https://doi.org/10.1109/jsen.2022.3170653
Autor:
Ashish Kumar, Arathy Varghese, Girraj Sharma, Manish Kumar, Gaurav K Sharma, Mahanth Prasad, Vijay Janyani, R.P. Yadav, Khaled Elgaid
Publikováno v:
Micro and Nanostructures. 179:207592
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d228efa9ed10c16bb56e6936bff0506
https://doi.org/10.1016/j.micrna.2023.207592
https://doi.org/10.1016/j.micrna.2023.207592
Autor:
Ashish Kumar, Arathy Varghese, Anup Sharma, Mahanth Prasad, Vijay Janyani, R.P. Yadav, Khaled Elgaid
Publikováno v:
Sensors and Actuators A: Physical. 347:113887
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6abe11c088bc4b80824c1bf37560aed
https://doi.org/10.1016/j.sna.2022.113887
https://doi.org/10.1016/j.sna.2022.113887
Presented through this work is a steady state analytical model of the GaN HEMT based gas detector. GaN with high chemical and thermal stability provides promises for detectors in hazardous environments. However, HEMT sensor resolution must be improve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f883fba59d2a1729a0e1aaa7a2e7864
Autor:
Michael A. Casbon, Rachel A. Oliver, Abdalla Eblabla, Saiful Alam, Khaled Elgaid, Saptarsi Ghosh, Bogdan F. Spiridon, Simon M. Fairclough, David J. Wallis, Menno J. Kappers, Alexander Hinz
Publikováno v:
ACS Applied Electronic Materials
The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semi-insulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF) signals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94319a661d36d362217b4795bf11482c
Publikováno v:
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM).
This paper presents a novel mm-wave branch line coupler with an enhanced isolation up to 72dB between the input ports, whereas a conventional branch line coupler usually gives less than 40dB of isolation. Similarly, there was also a small increase in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab2906472566a2b59dec467605ad399b
https://doi.org/10.1109/asdam50306.2020.9393863
https://doi.org/10.1109/asdam50306.2020.9393863
Publikováno v:
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM).
In this letter, the design and demonstration of a frequency doubler is presented utilizing the in-house developed technology of AlGaN/GaN multichannel Schottky barrier diode (SBD). The results show a promising GaN frequency multiplier that can be use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::179d26a0d7dd3d3018ca21b9c3635b6a
https://doi.org/10.1109/asdam50306.2020.9393861
https://doi.org/10.1109/asdam50306.2020.9393861
In this article, we report the optimization of ohmic contact formation on AlGaN/GaN on low-resistivity silicon. For achieving this, a strategy of uneven AlGaN/GaN was introduced through patterned etching of the substrate under the contact. Various pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df1ae8ca3a1909b72df459b3724444b3