Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Khadim Dieng"'
Autor:
Yann Lamy, Anne-Laure Perrier, Khadim Dieng, Olivier Guiller, Bernard Flechet, Alexis Farcy, Philippe Artillan, Cedric Bermond, Thierry Lacrevaz, Grégory Houzet, Sylvain Joblot
Publikováno v:
IEEE Transactions on Components Packaging and Manufacturing Technology Part B
IEEE Transactions on Components Packaging and Manufacturing Technology Part B, 2017, 7 (4), pp.477-484. ⟨10.1109/TCPMT.2017.2655939⟩
IEEE Transactions on Components Packaging and Manufacturing Technology Part B, Institute of Electrical and Electronics Engineers (IEEE), 2017, 7 (4), pp.477-484. ⟨10.1109/TCPMT.2017.2655939⟩
IEEE Transactions on Components Packaging and Manufacturing Technology Part B, 2017, 7 (4), pp.477-484. ⟨10.1109/TCPMT.2017.2655939⟩
IEEE Transactions on Components Packaging and Manufacturing Technology Part B, Institute of Electrical and Electronics Engineers (IEEE), 2017, 7 (4), pp.477-484. ⟨10.1109/TCPMT.2017.2655939⟩
International audience; The feasibility of cointegration of new capacitors, named “through silicon capacitors” (TSCs) with “through silicon vias” in silicon interposers has recently been demonstrated. Two architectures of TSC are extensively
Autor:
Philippe Artillan, Grégory Houzet, Khadim Dieng, Yann Lamy, Cedric Bermond, Thierry Lacrevaz, Ossama El Bouayadi, Bernard Flechet
Publikováno v:
IEEE Transactions on Components Packaging and Manufacturing Technology Part B
IEEE Transactions on Components Packaging and Manufacturing Technology Part B, Institute of Electrical and Electronics Engineers (IEEE), 2014, 4 (9), pp.1515-1522. ⟨10.1109/TCPMT.2014.2337511⟩
IEEE Transactions on Components Packaging and Manufacturing Technology Part B, Institute of Electrical and Electronics Engineers (IEEE), 2014, 4 (9), pp.1515-1522. ⟨10.1109/TCPMT.2014.2337511⟩
International audience; This paper deals with the wideband frequency molding material characterization in three dimensions stack of integrated circuits (3-D IC). This material is required as a passivation layer at the top of an element called interpo
Autor:
Alexis Farcy, Philippe Artillan, Yann Lamy, Bernard Flechet, Grégory Houzet, Sylvain Joblot, Olivier Guiller, Khadim Dieng, Cedric Bermond, Thierry Lacrevaz
Publikováno v:
2016 IEEE 20th Workshop on Signal and Power Integrity (SPI)
2016 IEEE 20th Workshop on Signal and Power Integrity (SPI), May 2016, Turin, Italy. pp.1-4, ⟨10.1109/SaPIW.2016.7496285⟩
2016 IEEE 20th Workshop on Signal and Power Integrity (SPI), May 2016, Turin, Italy. pp.1-4, ⟨10.1109/SaPIW.2016.7496285⟩
The «Through Silicon Vias» technology, developed for silicon interposer interconnects network, has inspired new capacitors components named «Through Silicon Capacitors (TSC)». Two architectures of TSC are studied in this paper: the Single Sided-T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e49bc7e1a3ff44d592cab57ab5a8fc2d
https://hal.science/hal-01992951
https://hal.science/hal-01992951
Autor:
Olivier Guiller, Grégory Houzet, Cedric Bermond, Thierry Lacrevaz, Philippe Artillan, Yann Lamy, B. Fléchet, Alexis Farcy, Khadim Dieng, Sylvain Joblot
Publikováno v:
2016 IEEE 66th Electronic Components and Technology Conference (ECTC)
2016 IEEE 66th Electronic Components and Technology Conference (ECTC), May 2016, Las Vegas, United States. pp.74-81, ⟨10.1109/ECTC.2016.335⟩
2016 IEEE 66th Electronic Components and Technology Conference (ECTC), May 2016, Las Vegas, United States. pp.74-81, ⟨10.1109/ECTC.2016.335⟩
The « Through Silicon Vias » technology, developed for silicon interposer interconnects network, has inspired new capacitor components named «Through Silicon Capacitors (TSC) ». Two architectures of TSC are studied in this paper: the Single Sided
Autor:
Sylvain Joblot, Philippe Artillan, Alexis Farcy, Khadim Dieng, Olivier Guiller, Bernard Flechet, Grégory Houzet, Yann Lamy, Cedric Bermond, Thierry Lacrevaz
Publikováno v:
2015 IEEE 65th Electronic Components and Technology Conference (ECTC)
2015 IEEE 65th Electronic Components and Technology Conference (ECTC), May 2015, San Diego, United States. pp.247-253, ⟨10.1109/ECTC.2015.7159600⟩
2015 IEEE 65th Electronic Components and Technology Conference (ECTC), May 2015, San Diego, United States. pp.247-253, ⟨10.1109/ECTC.2015.7159600⟩
Inspired from Through Silicon Vias (TSVs), Through Silicon Capacitors (TSCs) are newly developed and integrated throughout silicon interposers. Thanks to the use of the third dimension in the silicon interposer, TSC technology allows to obtain high c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b34f934e9a60e06295c6c1c4eac4b317
https://hal.science/hal-01992912
https://hal.science/hal-01992912
Autor:
Cedric Bermond, Thierry Lacrevaz, Grégory Houzet, Sylvain Joblot, Khadim Dieng, Yann Lamy, Bernard Flechet, Alexis Farcy, Philippe Artillan, Olivier Guiller
Publikováno v:
2014 International 3D Systems Integration Conference (3DIC)
2014 International 3D Systems Integration Conference (3DIC), Dec 2014, Kinsdale, Ireland. pp.1-8, ⟨10.1109/3DIC.2014.7152152⟩
3DIC
2014 International 3D Systems Integration Conference (3DIC), Dec 2014, Kinsdale, Ireland. pp.1-8, ⟨10.1109/3DIC.2014.7152152⟩
3DIC
International audience; Inspired from Through Silicon Vias (TSVs), Through Silicon Capacitors (TSCs) are newly developed capacitors integrated throughout the silicon interposer. This paper deals with a demonstrator which investigates the first proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c92235084fa3a15ee02739db28f575d9
https://hal.archives-ouvertes.fr/hal-01992256/document
https://hal.archives-ouvertes.fr/hal-01992256/document
Publikováno v:
IEEE ECTC 2014, 64th Electronic Components and Technology Conference
IEEE ECTC 2014, 64th Electronic Components and Technology Conference, May 2014, Lake Buena Vista, Florida, United States. pp.1-4
IEEE ECTC 2014, 64th Electronic Components and Technology Conference, May 2014, Lake Buena Vista, Florida, United States. pp.1-4
First part of this paper discusses decoupling method limitation within the Power Delivery Network of a classical circuit and challenges introduced by 3D integrated circuit in term of power management. Solutions are exposed, such as integration of dec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c079f8b12d5b4b74eb788bfb69ed1250
https://hal.archives-ouvertes.fr/hal-01021507
https://hal.archives-ouvertes.fr/hal-01021507
Autor:
Dieng, Khadim, Artillan, Philippe, Bermond, Cedric, Guiller, Olivier, Lacrevaz, Thierry, Joblot, Sylvain, Houzet, Gregory, Farcy, Alexis, Perrier, Anne-Laure, Lamy, Yann, Flechet, Bernard
Publikováno v:
IEEE Transactions on Components, Packaging & Manufacturing Technology; Apr2017, Vol. 7 Issue 4, p477-484, 8p
Autor:
Dieng, Khadim, Bermond, Cedric, Artillan, Philippe, Guiller, Olivier, Lacrevaz, Thierry, Joblot, Sylvain, Houzet, Gregory, Farcy, Alexis, Lamy, Yann, Flechet, Bernard
Publikováno v:
2016 IEEE 20th Workshop on Signal & Power Integrity (SPI); 2016, p1-4, 4p
Autor:
Dieng, Khadim, Artillan, Philippe, Bermond, Cedric, Guiller, Olivier, Lacrevaz, Thierry, Joblot, Sylvain, Houzet, Gregory, Farcy, Alexis, Lamy, Yann, Flechet, Bernard
Publikováno v:
2015 IEEE 65th Electronic Components & Technology Conference (ECTC); 2015, p247-253, 7p