Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Kezhong Hu"'
Publikováno v:
Journal of Crystal Growth. 127:68-72
Doped channel metal-insulator-semiconductor field effect transistors (DC-MISFETs) in the highly strained AlxGa1-xAs/ In0.26Ga0.74As/AlyGa1-yAs (0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::918fe49185c4d72b89b5df672e221b51
https://doi.org/10.1016/0022-0248(93)90579-l
https://doi.org/10.1016/0022-0248(93)90579-l
Publikováno v:
IEEE Photonics Technology Letters. 4:263-266
InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using "normally on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b91c566e67a8706c637b6cb17ef1737
https://doi.org/10.1109/68.122387
https://doi.org/10.1109/68.122387
Autor:
Anupam Madhukar, Chris Kyriakakis, Kezhong Hu, Li Chen, K. C. Rajkumar, Zaheed Karim, R. Kapre, Armand R. Tanguay
Publikováno v:
LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf33397e5d4f6045b063e397320fa976
https://doi.org/10.1109/leosst.1991.638922
https://doi.org/10.1109/leosst.1991.638922
Autor:
Zaheed Karim, R. F. Cartland, Anupam Madhukar, Armand R. Tanguay, Li Chen, Chris Kyriakakis, Kezhong Hu
Publikováno v:
Applied Physics Letters. 66:2774-2776
A novel method is demonstrated for the correction of cavity thickness deviations imposed by technological limitations in the growth process of a resonant cavity spatial light modulator. This method is based on cavity phase compensation through the us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c07ecc2b33ca3ac52355af786db83631
https://doi.org/10.1063/1.113471
https://doi.org/10.1063/1.113471
Publikováno v:
Applied Physics Letters. 65:995-997
The switch‐on and switch‐off times of a p‐i‐n diode containing In0.13Ga0.87As/GaAs multiple quantum wells in the i region have been characterized by a time‐resolved pump/probe technique. We observe bias‐insensitive switch‐on times and d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::314efe77950986e75f43d02726976e99
https://doi.org/10.1063/1.112173
https://doi.org/10.1063/1.112173
Publikováno v:
Applied Physics Letters. 64:2913-2915
The wavelength dispersion of the phase shift on reflection that is inherent in dielectric Bragg mirrors can be used to phase compensate resonant‐cavity‐based devices such as multiple quantum well asymmetric Fabry–Perot spatial light modulators
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f432947e92868ccc2eb50c9c7296d7b
https://doi.org/10.1063/1.111409
https://doi.org/10.1063/1.111409
Autor:
Li Chen, Ching‐Mei Yang, Wei Chen, Elsa Garmire, Daniel Mahgerefteh, Kezhong Hu, Anupam Madhukar
Publikováno v:
Applied Physics Letters. 61:2592-2594
We report the first picosecond time‐resolved measurements of electroabsorption in a strained InGaAs/GaAs multiple quantum well p‐i‐n structure as a function of applied bias at various optical excitation densities. The data above 4 V are explain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c536d10846898cca7d8a2cea1a6f787
https://doi.org/10.1063/1.108137
https://doi.org/10.1063/1.108137
Publikováno v:
Applied Physics Letters. 60:422-424
We demonstrate a new class of ‘‘normally off’’ high contrast ratio asymmetric Fabry–Perot (ASFP) reflection modulators based on a blue‐shift of the Fabry–Perot mode under bias. The negative differential resistance (NDR) exhibited by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::553977a815ebdca309b97f7473a7fb53
https://doi.org/10.1063/1.106622
https://doi.org/10.1063/1.106622
Autor:
Li Chen, Anupam Madhukar, Ping Chen, Kezhong Hu, Armand R. Tanguay, Chris Kyriakakis, Zaheed Karim
Publikováno v:
Applied Physics Letters. 59:1664-1666
We report the realization of an inverted cavity (through‐substrate) reflection modulator based on an asymmetric Fabry–Perot configuration that utilizes the transparency of the GaAs substrate for operation at wavelengths appropriate for strained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77e94425d4a029e6e1691abb1a86ea40
https://doi.org/10.1063/1.106261
https://doi.org/10.1063/1.106261
Autor:
Anupam Madhukar, Kezhong Hu, K. Kaviani, Chris Kyriakakis, K. C. Rajkumar, Armand R. Tanguay, Ping Chen, Zaheed Karim, Li Chen
Publikováno v:
Applied Physics Letters. 59:1108-1110
We report the realization of both high contrast ratio (66:1) and dynamic range (30%) at room temperature in a strained GaAs/InGaAs(100) multiple quantum well based asymmetric Fabry–Perot reflection modulator. The p‐i‐n configuration modulator a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::559843dab883412d8d1b07b856ce32f6
https://doi.org/10.1063/1.106359
https://doi.org/10.1063/1.106359