Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Keyun Gu"'
Publikováno v:
Functional Diamond, Vol 3, Iss 1 (2023)
A resonator with a high Q factor is generally pursued in the single-crystal diamond (SCD) microelectromechanical system (MEMS) for high-performance sensors. In this report, we investigate the oxygen etching effect of SCD on the Q factors of the SCD r
Externí odkaz:
https://doaj.org/article/67087da8542b45a2acdef8ebcc21c147
Autor:
Guo Chen, Zilong Zhang, Keyun Gu, Liwen Sang, Satoshi Koizumi, Masaya Toda, Haitao Ye, Yasuo Koide, Zhaohui Huang, Meiyong Liao
Publikováno v:
Applied Physics Express, Vol 17, Iss 2, p 021001 (2024)
MEMS resonant sensing devices require both HF ( f ) and low dissipation or high quality factor ( Q ) to ensure high sensitivity and high speed. In this study, we investigate the resonance properties and energy loss in the first three resonance modes,
Externí odkaz:
https://doaj.org/article/23c1ce7cc38e4fc5b8bccec3104bbe75
Publikováno v:
Functional Diamond, Vol 4, Iss 1 (2024)
Achieving efficient low-voltage actuation of microelectromechanical system (MEMS) resonators in high-temperature environments poses a difficult topic due to the thermal interference and the risk of high-temperature failure. In this work, the single-c
Externí odkaz:
https://doaj.org/article/b2bbfe090d5345c89f41003af0b10f7d
Publikováno v:
Physica Status Solidi - Rapid Research Letters; Apr2024, Vol. 18 Issue 4, p1-6, 6p
Publikováno v:
Journal of Materials Chemistry C. 11:5371-5377
Self-powered solar-blind UV detectors are playing an increasingly critical role in the sustainable development of photodetectors with low energy consumption.
Autor:
Jie Deng, Haofei Huang, Ke Tang, Shilin Wang, Mengqian Wang, Zun Liu, Keyun Gu, Yi Shang, Linjun Wang, Jian Huang
Publikováno v:
Optik. 274:170550
Publikováno v:
Applied Surface Science. 605:154606
Autor:
zilong zhang, Keyun Gu, Tianyu Zou, Jian Huang, Ke Tang, Yue Shen, Jieyu Zhang, Meiyong Liao, Linjun Wang
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
Vacuum. 195:110671
The realization of the free interface strain between a Ga2O3 material and a substrate is significantly critical to fulfill the requirements for the fabrication of high-quality Ga2O3 material. In this work, a seed layer (SL) was utilized to circumvent
Autor:
Keyun Gu, Shang Yi, Meng Cao, Ke Tang, Jie Deng, Zhang Zhiluo, Chen Zhuorui, Jian Huang, Yan Hu, Linjun Wang
Publikováno v:
Materials Science in Semiconductor Processing. 134:106040
In recent years, Ga2O3 has attracted extensive attention at home and abroad due to its excellent properties. In this paper, Ta-doped Ga2O3 films were grown on quartz substrates by magnetron sputtering technique. Effects of substrate temperature and s