Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Key-Min Lee"'
Autor:
Hee-Hwan Ji, Hi-Deok Lee, Ki-Seok Yoon, Keun-Koo Kang, Young-Jin Park, Mi-Suk Bae, Myoung-Jun Jang, Jung-Hoon Choi, Geun-Suk Park, Joo-Hyoung Lee, Key-Min Lee, Seong-Hyun Park
Publikováno v:
Japanese Journal of Applied Physics. 41:2445-2449
The penetration depth of cobalt silicide layer in shallow junction is assessed using the current–voltage curve both in reverse and forward bias regions. The reverse leakage current characteristics said that silicide has affected both of the areal a
Autor:
Kwon Hong, Kyoo Ho Jung, Hyeong Soo Kim, Sungki Park, Moon-Sig Joo, Woo-young Park, Beom-Yong Kim, Wangee Kim, Key-Min Lee, B. M. Seo
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Autor:
Key-Min Lee, Sung-Kwon Hong, Tae Yeon Seong, Hi-Deok Lee, Joo-Hyoung Lee, Chel-Jong Choi, Jae-Gyung Ahn, Young-Jin Park
Publikováno v:
IEEE Transactions on Electron Devices. 49:937-939
We have proposed that As dopants in the n/sup +//p active region are redistributed during Co salicidation process, especially in the active edge area in contact with the field oxide. The dopant redistribution has been verified through a novel two-dim
Publikováno v:
IEEE Electron Device Letters. 23:188-190
The leakage mechanism in p/sup +//n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM
Autor:
Jung-Hoon Choi, Geun-Suk Park, Sung-Hyung Park, Young-Jin Park, Myoung-Jun Jang, Key-Min Lee, Hee-Goo Youn, Hi-Deok Lee, Ki-Seok Yoon, Joo-Hyoung Lee
Publikováno v:
2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat. No.01TH8538).
Until now, antenna ratio was considered one of the most important parameters for plasma induced damage, and tolerable antenna ratio is very important for circuit designers to guarantee high yield circuits. In this paper, the dependence of plasma indu
Autor:
Jung-Hoon Choi, Young-Jin Park, Keun-Koo Kang, Hi-Deok Lee, Key-Min Lee, Ki-Seok Yoon, Myoung-Jun Jang, Geun-Suk Park, Seong-Hyun Park, Joo-Hyoung Lee
Publikováno v:
Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials.
Autor:
Dong Kyun Sohn, Hae Wang Lee, Nag Kyun Sung, Jin Won Park, Sang Hyuk Park, Jae-Gyung Ahn, Dae Kwan Kang, Ihl Hyun Cho, Yun Jun Huh, Hong Goo Choi, Seok-Woo Lee, Key Min Lee
Publikováno v:
Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials.
Autor:
Sung-Hyung Park, Hi-Deok Lee, Key-Min Lee, Myoung-Jun Jang, Joo-Hyoung Lee, Geun-Suk Park, Ki-Seok Yoon, Jung-Hoon Choi, Young-Jin Park, Hee-Goo Youn
Publikováno v:
2001 6th International Symposium on Plasma- & Process-Induced Damage (IEEE Cat. No.01TH8538); 2001, p124-127, 4p
Autor:
Young-Woo Ok, Tai Yeon Seong, Joo-Hyoung Lee, Key Min Lee, Shiva S. Hullavarad, Chel-Jong Choi, Young-Jin Park
Publikováno v:
Journal of The Electrochemical Society. 149:G517
The effects of hydrogen implantation on the structural and electrical properties of nickel silicide have been investigated. Ni films (30 nm) are electron-beam-evaporated on Si substrates, after which plasma immersion ion implantation is used to intro
Publikováno v:
Electrochemical and Solid-State Letters. 4:G88