Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Kevni Büyüktas"'
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Superjunction (SJ) Si-MOSFET power transistors have a larger active volume and thus a higher heat capacitance than wide-bandgap semiconductors with the same voltage and current rating. This could allow for higher power dissipation levels and thus inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dea78bed631fbd94be94a960ac1d47c4
https://doi.org/10.1109/ispsd.2016.7520846
https://doi.org/10.1109/ispsd.2016.7520846
Publikováno v:
2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
A TLP system with a very low characteristic impedance of 1.5Ω and a selectable pulse length from 0.5 to 6 µs is presented. It covers the entire operation region of many power semiconductors up to 700V and 400 A. Its applicability is demonstrated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f2c1645c3da3f7be6ac5b7a1551185a
https://doi.org/10.1109/eosesd.2015.7314794
https://doi.org/10.1109/eosesd.2015.7314794
Publikováno v:
International Journal of Microwave Science and Technology.
A novel technological method to improve the quality factor (Q) of RF-integrated inductors for wireless applications is presented in this paper. A serious reduction of substrate losses caused by capacitive coupling is provided. This is realised by rem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a84c0aef83dd3afad552f5bfa14fc624
Publikováno v:
Semiconductor Science and Technology. 24:075007
The necessity for exact modelling and simulation data of the electrical characteristics of passive on-chip devices has become more and more important. The electrical performance of RF circuits is predominantly restricted by the passives. In this work
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45ffbf0896cc20aa423365021aace0f4
https://doi.org/10.1088/0268-1242/24/7/075007
https://doi.org/10.1088/0268-1242/24/7/075007
Publikováno v:
Semiconductor Science and Technology. 24:015010
The requirements for the electrical characteristics of passive on-chip devices become more and more important. The electrical performance of RF circuits is predominantly restricted by the passives. New technologies and new device concepts are necessa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32933a98c5720d2f22b2ceee155206bb
https://doi.org/10.1088/0268-1242/24/1/015010
https://doi.org/10.1088/0268-1242/24/1/015010