Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Kevin W. Haberern"'
Publikováno v:
Journal of Crystal Growth. 159:582-585
We have studied the lateral waveguiding properties of gain-guided and index-guided II–VI lasers under pulsed conditions and their influence on threshold current density J th and differential quantum efficiency η. Thermal index-guiding was found to
Autor:
G.D. U'Ren, Kevin W. Haberern, G.M. Haugen, S. Guha, S.P. Herko, J. M. Gaines, John Petruzzello, Thomas M. Marshall
Publikováno v:
Journal of Crystal Growth. 159:573-581
We have used a combination of techniques to characterize low defect density (≤ 10 5 cm −2 ) blue-green separate confinement heterostructure lasers. The limits of lattice mismatch between the substrate and quaternary cladding layers that result in
Publikováno v:
Philips Journal of Research. 49:225-244
Threshold current densities and lasing wavelengths of both ZnSSe/ZnSe/ ZnCdSe and ZnMgSSe/ZnSSe/ZnCdSe lasers under short-pulse (100 ns) operation have been measured as a function of temperature. In the second structure, improved electrical confineme
Publikováno v:
Journal of Applied Physics. 76:3988-3993
Threshold current densities and wavelengths of gain maximum and longitudinal modes have been determined as a function of temperature for various laser structures. The onset of intrapulse heating has been studied and interpreted. In Zn0.92Mg0.08S0.12S
Autor:
Maarten Buijs, L.-L. Chao, Kevin W. Haberern, C. Kothandaraman, G. S. Cargill, G. M. Haugen, K. K. Law, E. Snoeks, John Petruzzello, T. Marshall
Publikováno v:
Applied Physics Letters. 70:535-537
A spatially resolved cathodoluminescence study of 〈100〉 dark line defects (DLDs) of degraded II–VI laser diodes based on a ZnCdSe/ZnMgSSe separate confinement heterostructure has been carried out at temperatures between room temperature and 8 K
Publikováno v:
Applied Physics Letters. 69:1089-1091
Three distinct etch pit features in ZnSe based epitaxial layers have been identified. The features were observed with optical dark field microscopy and confirmed to be pits using scanning electron microscopy. Using transmission electron microscopy, w
Publikováno v:
Applied Physics Letters. 67:1987-1989
Carrier confinement in blue‐green II–VI semiconductor lasers was investigated. For devices longer than 300 μm an energy barrier of 260–280 meV was found to confine the electrons, the carrier being mainly responsible for leakage, within the act
Publikováno v:
Applied Physics Letters. 63:2800-2802
Differential van der Pauw–Hall effect and resistivity measurements have been performed to determine the concentration and mobility of free holes in nitrogen doped ZnSe and Zn1−xMgxSySe1−y thin films. Hall data taken between 120 and 300 K, with
Publikováno v:
Applied Physics Letters. 62:2462-2464
We describe the performance of blue‐green injection lasers containing Zn1−xMgxSySe1−y cladding layers. The devices have yielded the lowest reported threshold current densities (500 A/cm2) and the highest reported pulsed output powers (500 mW) a
Autor:
P.F. Baude, M. A. Haase, Kevin W. Haberern, Maarten Buijs, Sharon J. Flamholtz, Kwok Keung Law, J. J. L. Horikx, G. M. Haugen, Thomas J. Miller
Publikováno v:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared.
We have demonstrated the feasibility of reading a high density Digital Versatile Disc using a green ZnSe based laser as the light source. In order to achieve this, high quality optical and electrical properties are required from the laser. We fabrica