Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Kevin W. Gorman"'
Publikováno v:
IEEE Design & Test. 33:31-37
With the growing number and speed of embedded memories, testing for delay defects in the logic surrounding RAMs is becoming increasingly important. This article introduces DFT techniques for testing the transition faults at the memory functional boun
Publikováno v:
IEEE Design & Test of Computers. 28:14-21
As power and density requirements for embedded memories grow, products ranging from mobile applications to high-performance microprocessors are increasingly looking toward eDRAM as an alternative to SRAM. This article describes the state of the art i
Publikováno v:
ITC
Delay faults on the inputs and outputs of memories embedded in an integrated circuit are difficult to cover efficiently in manufacturing test. A complicated approach, separate from standard digital logic tests or memory built-in self-test, is needed
Autor:
Darren L. Anand, S. Sliva, Jeffrey H. Dreibelbis, Dale E. Pontius, Michael R. Nelms, Erik A. Nelson, S. Burns, Kevin W. Gorman, Adrian J. Paparelli, John E. Barth, G. Pomichter, John A. Fifield
Publikováno v:
IEEE Journal of Solid-State Circuits. 40:213-222
This work describes a 500-MHz compiled eDRAM macro offered in a 90-nm logic-based process. The macro architecture is optimized for high bandwidth while enabling compilation in bank and data-word dimensions. A direct write scheme simultaneously improv
Autor:
J. Paparelli, John A. Fifield, Dale E. Pontius, Michael A. Roberge, S. Sliva, Kevin W. Gorman, Jeffrey H. Dreibelbis, Darren L. Anand, J. Covino, G. Pomichter, Mark D. Jacunski
Publikováno v:
CICC
An embedded DRAM macro fabricated in 65 nm CMOS achieves 1.0 GHz multi-banked operation at 1.0 V yielding 584 Gbits/sec. The array utilizes a 0.1 1 mum2 cell with 20 fF deep trench capacitor and 2.2 nm gate oxide transfer gate. Concurrent refresh all
Autor:
G. Pomichter, Michael A. Roberge, Adrian J. Paparelli, W.R. Corbin, Kevin W. Gorman, S. Sliva
Publikováno v:
ITC
This paper discusses the unique challenges in constructing an architecture and methodology for testing a 1 GHz 65 nm Embedded DRAM in an ASIC environment. The concepts of multiplication of both test commands and test clock frequency are discussed in
Publikováno v:
CICC
This work presents architectures and methods necessary for providing efficient and thorough test of high bandwidth embedded memories using low speed ATE. Details are also provided on the techniques used to minimize test related silicon area and test
Publikováno v:
VTS
A circuit has been developed to accurately generate embedded memory fail maps utilizing At-Speed test clocks generated from low-speed automated test equipment (ATE). The circuit provides a simple interface to communicate between the BIST and ATE for