Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Kevin Moraes"'
Publikováno v:
Proceedings of the Eighth Japan-U.S. Conference on Composite Materials ISBN: 9780367812720
Proceedings of the Eighth Japan-U.S. Conference on Composite Materials
Proceedings of the Eighth Japan-U.S. Conference on Composite Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::653fbb35f6771e2322c885fa7d6c5d9d
https://doi.org/10.1201/9780367812720-52
https://doi.org/10.1201/9780367812720-52
Autor:
Jennifer Tseng, Zhiyuan Wu, Kevin Moraes, Lee Joung Joo, Abhinav Kumar, Amir Wachs, Mehul Naik, Kourosh Nafisi, Dror Shemesh, Jorge Pablo Fernandez
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
We present here our studies on using electron beams to locate copper fill voids in dual damascene structures down to 10nm CD. It is shown that the e-beam technique can be optimized for detecting embedded voids in non-destructive manner that enables f
Autor:
Larry G. Sneddon, Masaki Narisawa, and David Wark, Kevin Moraes, Leonard V. Interrante, Alexis R. Puerta⊥ and, Jeremy Vosburg
Publikováno v:
Chemistry of Materials. 16:125-132
A novel method of preparing multiphase ceramic materials from mixtures of preceramic polymers is described. This method employs the typical immiscibility of polymer blends to prepare two-phase SiC−BN ceramic composites by co-pyrolysis of a mixture
Autor:
Leonard V. Interrante, Kevin Moraes
Publikováno v:
Journal of the American Ceramic Society. 86:342-346
Bulk specimens of precursor-derived silicon carbide (SiC) suitable for mechanical-property measurements were prepared from allylhydridopolycarbosilane (AHPCS), which is a commercially available, hyperbranched polycarbosilane. Crack-free pellets were
Publikováno v:
Pure and Applied Chemistry. 74:2111-2117
A hyperbranched polycarbosilane of the type [R3SiCH2−] x [−SiR2CH2−] y [−SiR(CH2−)1.5] z [−Si(CH2−)2] l (R = H, –CH2CH=CH2, or OR) has been prepared, which was used as a source of inorganic/organic hybrid materials and, through pyroly
Autor:
Takeshi Hasegawa, Tom Apple, Kevin Moraes, Masayoshi Itoh, Leonard V. Interrante, Masaki Narisawa, Kiyohito Okamura
Publikováno v:
Journal of Materials Research. 17:214-223
Polyvinylsilane (PVS), derived from vinylsilane by radical polymerization, was partially oxidized in hot carbon tetrachloride solution by flowing air. If the air flow time is adjusted, soft gel films can be formed in a Teflon dish by casting the PVS
Publikováno v:
Advanced SiC/SiC Ceramic Composites: Developments and Applications in Energy Systems
Previous studies of the polycarbosilane, "HPCS", and its partially allyl-substituted derivative, AHPCS, have indicated a hyperbranched molecular structure consisting of a mixture of terminal -CH 2 SiR 3 , and internal -CH 2 SiR n (CH 2 -) 3 - n (n =
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5e9c3bab12ff69cf6370710fd8e4243
https://doi.org/10.1002/9781118406014.ch11
https://doi.org/10.1002/9781118406014.ch11
Autor:
Chorng-Ping Chang, Haichun Yang, Sree Rangasai V. Kesapragada, Naomi Yoshida, Zhigang Xie, Miller Allen, Rongjun Wang, Dave Liu, Xianmin Tang, Srinivas Gandikota, Guojun Liu, Jianxin Lei, Zhenbin Ge, Kevin Moraes, Steven Hung, Yu Lei, Xinliang Lu
Publikováno v:
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this work, representative high-k/metal gate MOS-capacitor stacks were fabricated in both gate first and replacement gate integration schemes. Aluminum- and lanthanum- based cap layers (both widely accepted as Vt tuning cap layers in the industry),
Publikováno v:
24th Annual Conference on Composites, Advanced Ceramics, Materials, and Structures: A: Ceramic Engineering and Science Proceedings
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8f0970a6d06c9a5c8e5e5c72f9be2e2
https://doi.org/10.1002/9780470294628.ch33
https://doi.org/10.1002/9780470294628.ch33
Autor:
Biju Ninan, Kevin Moraes, See-Eng Phan, Tanaka Keiichi, Jianxin Lei, Chien-Teh Kao, Kishore Lavu, Srinivas Gandikota, Bingxi Wood, Xinliang Lu
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing.
For advanced devices at 65 nm node and beyond, nickel silicide formed by depositing Ni or its alloys with subsequent annealing has been chosen as the source/drain and gate contact materials. An in-situ dry chemical cleaning technology (Siconi ) has b