Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Kevin Moeggenborg"'
Publikováno v:
Defect and Diffusion Forum. 425:63-68
Buffer layer optimization is a critical technique to mitigate defect propagation from substrate to epilayer, reduce stress, and prevent generation of ingrown defects. In the present study, the impact of dopant transition from substrate to the buffer
Autor:
Ian Manning, Kevin Moeggenborg, Andrey Soukhojak, Jon Searson, Matthew Gave, Gil Chung, Edward Sanchez
Publikováno v:
Materials Science Forum. 1062:54-58
200 mm diameter n-type 4H SiC wafers were produced from bulk crystals grown using a physical vapor transport (PVT) method. The configuration of the growth cell was modified to both allow for the growth of larger crystals with respect to the standard
Autor:
Kevin Moeggenborg, Meong Keun Ju
Publikováno v:
Materials Science Forum. 1062:175-179
Wafer scratching from handling and processing can impact the performance of devices grown on a substrate. Knowledge of process conditions and modeling of scratches on wafers can be used to elucidate the root cause of scratches so that they can be eli
Publikováno v:
Materials Science Forum. 963:530-533
The impact of surface stress due to polish and grind processes on wafer bow was studied as a function of abrasive size. Results indicate that sub-surface damage from these processes can introduce significant surface stress. For polishing processes, t
Autor:
Jeffrey Quast, Ian Manning, Christopher Parfeniuk, Victor Torres, Kevin Moeggenborg, Bernd Thomas, Gil Yong Chung, Edward Sanchez, Jie Zhang, Daniel Adams, Clinton Whiteley, Darren Hansen
Publikováno v:
Materials Science Forum. 858:11-14
Efforts to develop 150 mm 4H SiC bare wafer and epitaxial substrates for power electronic device applications have resulted in quality improvements, such that key metrics match or outperform 100 mm substrates. Total dislocation densities and threadin
Publikováno v:
Materials Science Forum. :161-164
This paper presents the current performance of 150mm SiC epitaxy on state-of-the-art 150mm substrates. Excellent on-wafer uniformity has been achieved with mean thickness uniformity at 1.8% and mean doping uniformity at 5.4%. The epilayer surface is
Publikováno v:
SPIE Proceedings.
Traditionally, aluminum optics have been produced via a combination of machining, lapping, and diamond turning techniques. The surface roughness and diffraction grating effects resultant from diamond turning have largely limited the use of these opti
Publikováno v:
Frontiers in Optics 2008/Laser Science XXIV/Plasmonics and Metamaterials/Optical Fabrication and Testing.
CMP processing of bare aluminum alloys has been shown to yield low surface roughness. The translation of roughness into mirror performance is compared through BRDF and veiling glare measurements for various aluminum processing techniques.
Publikováno v:
Frontiers in Optics 2008/Laser Science XXIV/Plasmonics and Metamaterials/Optical Fabrication and Testing.
Chemical-mechanical polishing (CMP) was developed for semiconductor manufacturing to allow rapid, reproducible finishing of varied materials. This paper discusses the benefits and challenges of CMP for finishing of high-quality optical materials.
Publikováno v:
Optifab 2007: Technical Digest.
For many years, Chemical Mechanical Planarization (CMP) has enabled the fabrication of highperformance multilevel integrated circuits for the electronics industry. While CMP techniques are now being used in the manufacturing of optical devices, the c