Výsledky vyhledávání - "Kevin Matsui"

Significant Improvement of Switching Characteristics in a 1. 2‐kV SiC SWITCH‐MOS by the Application of Kelvin Source Connection

Autor: Kevin Matsui, Takeshi Tawara, Shinsuke Harada, So Tanaka, Hiroshi Sato, Hiroshi Yano, Noriyuki Iwamuro

Publikováno v: IEEJ Transactions on Electrical and Electronic Engineering. 18:278-285

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::df2acd1e76bf8f2a4f6148f7482d9a1d
https://doi.org/10.1002/tee.23727

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Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal

Autor: Noriyuki Iwamuro, Ruito Aiba, Hiroshi Yano, Shinsuke Harada, Masakazu Baba, Kevin Matsui

Publikováno v: IEEE Electron Device Letters. 41:1810-1813

In this letter, the authors demonstrated superior electrical characteristics of a 1.2 kV SiC Schottky barrier diode-wall integrated trench MOSFET (SWITCH-MOS) with the higher Schottky barrier height of nickel. It was confirmed that a significant impr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e25732f8054aef5e28a56a06d7cc5178
https://doi.org/10.1109/led.2020.3031598

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Experimental and Numerical Demonstration of Superior RBSOAs in 1.2 kV SiC Trench and SBD-integrated Trench MOSFETs

Autor: Shinsuke Harada, Shunki Todaka, Kevin Matsui, Noriyuki Iwamuro, Hiroshi Yano, Ruito Aiba, Masakazu Baba

Publikováno v: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

In this study, we investigated the reverse bias safe operating areas (RBSOAs) of three types of state-of-the-art 1.2 kV SiC trench MOSFETs, through experiments and numerical simulations. The experimental results revealed that both SiC trench MOSFETs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b96abf3144702c1aa728b450945c4bfe
https://doi.org/10.23919/ispsd50666.2021.9452236

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Comprehensive Study on Electrical Characteristics in 1.2 kV SiC SBD-integrated Trench and Planar MOSFETs

Autor: Kevin Matsui, Ruito Aiba, Masakazu Baba, Hiroshi Yano, Noriyuki Iwamuro, Shinsuke Harada

Publikováno v: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

This study investigated the static and dynamic characteristics of a 1.2 kV SiC SBD-integrated trench MOSFET (SWITCH-MOS) and an SBD-integrated planar MOSFET. The SWITCH-MOS exhibited superior switching characteristics to the planar type MOSFET, while

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ed08967e7cdb5eaaf9740aa25493044
https://doi.org/10.23919/ispsd50666.2021.9452287

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Investigation of dVDS/dt Controllability on Rg in SWITCH-MOS to Achieve Superior Turn-on Characteristics with Low dVDS/dt

Autor: Taiga Kanamori, Hiroshi Yano, Kevin Matsui, Masataka Okawa, Shinsuke Harada, Ruito Aiba, Noriyuki Iwamuro

Publikováno v: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

In this study, we investigated dV DS /dt controllability on gate resistance (R g ) in a 1.2 kV SWITCH-MOS. In the case of large R g , the SWITCH-MOS showed roughly the same dV DS /dt as a conventional SiC trench MOSFET. However, in the case of small

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4ea7512b40d33130ef1a8d0c3972e1b9
https://doi.org/10.1109/ispsd46842.2020.9170065

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