Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Kevin M. Speer"'
Publikováno v:
Materials Science Forum. :777-780
The SiC vacuum field-effect transistor (VacFET) was first reported in 2010 as a diagnostic tool for characterizing the fundamental properties of the inverted SiC semiconductor surface without confounding issues associated with thermal oxidation. In t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70ce1efb3646817904a03249de344f74
https://doi.org/10.4028/www.scientific.net/msf.717-720.777
https://doi.org/10.4028/www.scientific.net/msf.717-720.777
Autor:
C. Parker, David C. Sheridan, James Gafford, Robin Schrader, Andrew N. Lemmon, Kevin M. Speer, Michael S. Mazzola, Jeffrey B. Casady
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2012:000144-000148
This is the first high-temperature static and dynamic characterization of a half-bridge power module using 1200 V, 45 mΩ depletion-mode vertical JFETs. With only 36 mm2 of JFET area, the peak pulsed current is measured to be nearly 500 A at room tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de47d84c2279ceea8122acb8413f078a
https://doi.org/10.4071/hitec-2012-wa12
https://doi.org/10.4071/hitec-2012-wa12
Publikováno v:
Materials Science Forum. :657-661
We introduce the vacuum field-effect transistor (VacFET), the first SiC FET to use a vacuum-sealed cavity in place of the traditional, solid gate dielectric. This device architecture eliminates the need to thermally oxidize the SiC surface, a practic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63545f603617fd5cfee4772ef9ff0741
https://doi.org/10.4028/www.scientific.net/msf.679-680.657
https://doi.org/10.4028/www.scientific.net/msf.679-680.657
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2011:000098-000103
The high-temperature static and dynamic characteristics of the new 1200 V, 45 mΩ, 9 mm2 depletion-mode SiC vertical trench junction field-effect transistor (vtJFET) are compared with those of a 1200 V, 50 mΩ, 9 mm2 enhancement-mode SiC vtJFET. It i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ca3c6b986ae6c00239766e56fa8175d
https://doi.org/10.4071/hiten-paper2-rschrader
https://doi.org/10.4071/hiten-paper2-rschrader
Publikováno v:
Journal of Electronic Materials. 37:672-680
This article presents cross-sectional transmission electron microscopy and molten-potassium hydroxide etching studies of (111) 3C-SiC diodes which we previously reported to be free of forward-voltage drift despite abundant electroluminescent linear f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b3ff1b013db8a90fd84dd1d889ee56f
https://doi.org/10.1007/s11664-007-0297-z
https://doi.org/10.1007/s11664-007-0297-z
Autor:
Clemens Burda, Philip G. Neudeck, Martin A. Crimp, David J. Spry, Kevin M. Speer, Pirouz Pirouz, Andrew J. Trunek, J.T. Hile
Publikováno v:
Materials Science Forum. :223-226
pn diodes have recently been fabricated from 3C-SiC material heteroepitaxially grown atop on-axis 4H-SiC mesa substrate arrays [1,2]. Using an optical emission microscope (OEM), we have investigated these diodes under forward bias, particularly inclu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49b70f9bd099835c4cc923fe0c66916a
https://doi.org/10.4028/www.scientific.net/msf.556-557.223
https://doi.org/10.4028/www.scientific.net/msf.556-557.223
Publikováno v:
physica status solidi (a). 204:2216-2221
p-n diodes were fabricated from 3C-SiC films heteroepitaxially grown atop on-axis, Si-face (0001) 4H-SiC mesa substrate arrays [P. G. Neudeck et al., Mater. Sci. Forum 433-436, 213 (2003); 527-529, 1335 (2006)]. Images taken by electroluminescence-ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78cdfb5b3f094f213469b7212ce6a37a
https://doi.org/10.1002/pssa.200675446
https://doi.org/10.1002/pssa.200675446
Publikováno v:
2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).
Since the release of power SiC JFETs in 2008 and power SiC MOSFETs in 2011, there are now more choices of SiC power transistors than ever before available to industrial power electronics markets. To inform prospective users, this paper surveys critic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6914f9f08e6dc13c668e3d35b99f88ae
https://doi.org/10.1109/apec.2012.6166175
https://doi.org/10.1109/apec.2012.6166175
Autor:
Robin Schrader, David C. Sheridan, V. Bondarenko, Kevin M. Speer, Kiran Chatty, Jeffrey B. Casady
Publikováno v:
ECS Meeting Abstracts. :2518-2518
The fast switching speeds, large current handling capability and superior thermal properties of SiC makes SiC Vertical Trench JFETs (VJFETs) ideal candidates for power electronic applications. This paper reports on the recent progress in the developm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0b740f6f371c829ef30b16489ddd0fb
https://doi.org/10.1149/ma2012-02/30/2518
https://doi.org/10.1149/ma2012-02/30/2518