Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Kevin Lauer"'
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085005-085005-6 (2021)
The piezo-resistive coefficient π44 is reported for the case of single crystalline p-type silicon. By comparing the measured sensitivity of pressure sensors with the simulated sensitivity of these pressure sensors, we are able to extract π44 since
Externí odkaz:
https://doaj.org/article/412737323a7d40bd878ff28691532bf8
Publikováno v:
AIP Advances, Vol 5, Iss 1, Pp 017101-017101-11 (2015)
Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existe
Externí odkaz:
https://doaj.org/article/982bee77a4a74f609e1295b7312fd493
Publikováno v:
physica status solidi (a). 219:2200099
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27830c1b541e377a0c5faa2794683d0f
https://doi.org/10.1002/pssa.202200099
https://doi.org/10.1002/pssa.202200099
Publikováno v:
physica status solidi (a). 219:2200180
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68efe2dfc05167de9306d1579d68e9f7
https://doi.org/10.1002/pssa.202200180
https://doi.org/10.1002/pssa.202200180
Publikováno v:
physica status solidi (a). 219:2200177
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::147df471581491bbaa34e44bf3f8dd22
https://doi.org/10.1002/pssa.202200177
https://doi.org/10.1002/pssa.202200177
Publikováno v:
Solid State Phenomena. 242:230-235
A method to measure the reaction rates of the iron acceptor pair association and dissociation is presented and applied. The activation energies of the dissociation and association reaction are determined for the acceptors boron, aluminum, gallium and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e571518a68aaa8138e9bdbc996e8744
https://doi.org/10.4028/www.scientific.net/ssp.242.230
https://doi.org/10.4028/www.scientific.net/ssp.242.230
Publikováno v:
Solid State Phenomena. 242:90-95
Further experimental support for theASi-Sii-defect as cause of light-induced degradation and as the defect responsible for a photoluminescence peak called P line in indium doped silicon is given. TheASi-Sii-defect model has two main implications rela
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3803342b5e9eecd9e980b14f174a8e32
https://doi.org/10.4028/www.scientific.net/ssp.242.90
https://doi.org/10.4028/www.scientific.net/ssp.242.90
Autor:
Mario Bähr, Kevin Lauer
Publikováno v:
Energy Procedia. 77:2-7
A laboratory type PID-test system was used to measure degradation curves of the shunt resistance during the stress test. It was found that these curves feature typically an initial plateau without significant changes and a mono-exponential decay, bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::781633916dc2aac01994d9ded0b4b87d
Publikováno v:
Energy Procedia. 55:564-569
Iron-acceptor (FeAc) pair association has been studied in compensated n-type silicon. A dynamic approach, based on the charge carrier recombination rates over the Fe i trap level, leads to an explanation of the observed FeAc pairing reaction in compe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3cdf8b9a81df74e4f066c01c7b5cf06
Autor:
Stefan Krischok, Ralf Röder, Kevin Lauer, Mario Bähr, Thomas Klein, A. Lawerenz, Uwe Gohs, Thomas Ortlepp
Publikováno v:
physica status solidi (a). 216:1900284
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f237532254c891746f876e837b21fa13
https://doi.org/10.1002/pssa.201900284
https://doi.org/10.1002/pssa.201900284