Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kevin L. Lin"'
Autor:
Mauro J. Kobrinsky, Hui Jae Yoo, Michael Christenson, Ram Krishnamurthy, Mark A. Anders, Robert L. Bristol, Giselle Elbaz, Himanshu Kaul, Kevin L. Lin, Brandon Holybee, Miriam Reshotko
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
An innovative 300mm process architecture that improves interconnect resistance and capacitance is presented. Test structures patterned in novel geometries that lower wiring RC are fabricated, and electrical measurements are compared to simulated valu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74fc20d6e3c0de75cff1a4dc8a10dd9b
https://doi.org/10.1109/iedm13553.2020.9371946
https://doi.org/10.1109/iedm13553.2020.9371946
Autor:
Tanya T. Kwan, Minh Nguyen, Dirk Zboralski, Anne Schumann, Anne Bredenbeck, Matthias Paschke, Christian Haase, Aileen Hoehne, Ulrich Reineke, Christiane Smerling, Frank Osterkamp, Jim Xiao, Andrew D. Simmons, Thomas C. Harding, Kevin L. Lin
Publikováno v:
Molecular Cancer Therapeutics. 20:LBA032-LBA032
Background: FAP is a membrane-bound protease with limited expression in normal tissues but high expression on cancer-associated fibroblasts abundant in the stroma of most tumors. FAP-2286 is a potent and selective FAP-targeted peptide linked to the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4919ec3ab51e23af228e1117a2d26a58
https://doi.org/10.1158/1535-7163.targ-21-lba032
https://doi.org/10.1158/1535-7163.targ-21-lba032
Autor:
Kevin L. Lin, Kanti Jain
Publikováno v:
IEEE Electron Device Letters. 30:14-17
Stretchable interconnects are fabricated on polymer substrates using metal patterns both as functional interconnect layers and as in situ masks for excimer laser photoablation. Single-layer and multilayer interconnects of various designs (rectilinear
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd437481be8e40d94b9e20d3f86cf593
https://doi.org/10.1109/led.2008.2008665
https://doi.org/10.1109/led.2008.2008665
Autor:
James S. Clarke, M. Harmes, Mona Mayeh, Hazel Lang, Hui Jae Yoo, Naskar Sudipto, Seung Hoon Sung, Bojarski Stephanie A, John J. Plombon, Colin T. Carver, Kevin L. Lin, Manish Chandhok, B. Krist, Jasmeet S. Chawla
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
Nickel silicide is an attractive option for interconnects at small dimensions because of its short electron mean free path and good electromigration behavior. Nickel silicide interconnects can be integrated using either a subtractive or damascene pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f5a53afe92975deba3040bb52431efa
https://doi.org/10.1109/iitc-mam.2015.7325612
https://doi.org/10.1109/iitc-mam.2015.7325612
Autor:
John J. Plombon, Hui Jae Yoo, Narendra Lakamraju, Colin T. Carver, B. Krist, Rahim Kasim, Kanwal Jit Singh, Tejaswi K. Indukuri, Jasmeet S. Chawla, Kevin L. Lin, James S. Clarke, Mauro J. Kobrinsky, J. Bielefeld, Hazel Lang, Kabir Nafees, M. Harmes, Jessica M. Torres, E. Mays, Jacob Faber, Christopher J. Jezewski, Alan Myers, Ramanan V. Chebiam
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
Planar capacitors can quickly test material properties of metals and dielectrics for interconnects. A sidewall capacitor device is used to evaluate metal thin-film barriers. Etch stop planar capacitors in turn can test multi-layer etch stops, exposin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e47dcd35f8378b2ae8fafb82d3251683
https://doi.org/10.1109/iitc-mam.2015.7325646
https://doi.org/10.1109/iitc-mam.2015.7325646
Autor:
Tejaswi K. Indukuri, John J. Plombon, Alan Myers, Mauro J. Kobrinsky, Narendra Lakamraju, Kevin L. Lin, Kanwal Jit Singh, Hui Jae Yoo, Jacob Faber, Christopher J. Jezewski, M. Harmes, B. Krist, James S. Clarke, Ramanan V. Chebiam, Hazel Lang, Colin T. Carver
Publikováno v:
IEEE International Interconnect Technology Conference.
A sidewall planar capacitor (SW CAP) vehicle is developed to closely simulate processing conditions for metal barrier and dielectric in an integrated structure. For a known tantalum barrier for copper on a low-K dielectric, SW CAP TDDB is similar to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d852e28e02fd964aa62b39c06b337a2
https://doi.org/10.1109/iitc.2014.6831864
https://doi.org/10.1109/iitc.2014.6831864
Publikováno v:
ISQED
3D IC, a novel packaging technology, is heavily studied to realize improved performance with denser packaging and reduced wirelength. Despite numerous advantages, thermal management is the biggest bottleneck to realize device stacking technology. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fba1c8eedf54818758d45bd1caf96d7f
https://doi.org/10.1109/isqed.2012.6187481
https://doi.org/10.1109/isqed.2012.6187481
Autor:
Kevin L. Lin, Kanti Jain
Publikováno v:
2010 IEEE Sensors.
Stretchable sensor arrays have applications in robotics, structural health monitoring (SHM) devices, and electronic textiles applications where they can be mounted directly on nonplanar surfaces. For robotics, pressure sensor arrays mimic the human s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abbae37c326b76591f77431e898af274
https://doi.org/10.1109/icsens.2010.5690817
https://doi.org/10.1109/icsens.2010.5690817
Autor:
Kanti Jain, Kevin L. Lin
Publikováno v:
SPIE Proceedings.
Stretchable interconnects are essential to large-area flexible circuits and large-area sensor array systems, and they play an important role towards the realization of the realm of systems which include wearable electronics, sensor arrays for structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc5f575289036ac6d59761f1a00e800c
https://doi.org/10.1117/12.809235
https://doi.org/10.1117/12.809235