Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Kevin L. Beaman"'
Autor:
Niccolo Righetti, Chandru Venkatasubramanian, Yifen Liu, Mebrahtu Henok T, Huang Guangyu, Haitao Liu, Xiangyu Yang, Salil Mujumdar, Akira Goda, Hiroyuki Sanda, Andrew Bicksler, Yu Yuwen, Srivardhan Gowda, Elisa Camozzi, Kevin L. Beaman, Tecla Ghilardi, Christian Caillat, Matt Ulrich, Randy J. Koval, Duo Mao
Publikováno v:
2017 IEEE International Memory Workshop (IMW).
The Gate-Induce-Drain-Leakage (GIDL)-assisted body biasing for erase, which is a technique essential to enabling 3DNAND Flash CMOS Under Array architectures, has been extensively studied and successfully optimized to achieve high-performance, reliabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1aef66bb5646d4e8eb0a61cac7fbd5d
https://doi.org/10.1109/imw.2017.7939067
https://doi.org/10.1109/imw.2017.7939067
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 16:138-146
Single-wafer technology has been shown to improve memory device performance and ultimately improve product yield for several front-end-of-line (FEOL) processes. Single-wafer processes that are reviewed include silicon nitride for word-line cap, flash
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5085481c1d3f86d3e28caf4486d12895
https://doi.org/10.1109/tsm.2003.810939
https://doi.org/10.1109/tsm.2003.810939
Publikováno v:
Materials Science and Engineering: B. 72:87-92
MeV implantation has generated interest as a gettering option in silicon since it was established that under the appropriate conditions of irradiation fluence, substrate oxygen content, and annealing treatment, at least two distinct regions, denoted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40faf465b8ef5ebac624a066866287cb
https://doi.org/10.1016/s0921-5107(99)00506-1
https://doi.org/10.1016/s0921-5107(99)00506-1
Publikováno v:
Solid State Phenomena. :247-252
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0715cb10280825f2a5a77b936019224
https://doi.org/10.4028/www.scientific.net/ssp.69-70.247
https://doi.org/10.4028/www.scientific.net/ssp.69-70.247
Publikováno v:
Journal of The Electrochemical Society. 146:1925-1928
Laterally displaced gettering sites have been studied as an alternative to traditional internal gettering and back-side gettering sites. Fe was diffused laterally and captured, first by coulombic pairing with B in p-type Si, and then by strategically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dbe2236f77e6db4f52f1f7acc14fa1c
https://doi.org/10.1149/1.1391867
https://doi.org/10.1149/1.1391867
Autor:
Fernando Gonzalez, Kevin L. Beaman, Sergei V. Koveshnikov, O. Kononchuk, George A. Rozgonyi, R. A. Brown
Publikováno v:
Solid State Phenomena. :69-74
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a165393ff36443a5ba874473b461d0
https://doi.org/10.4028/www.scientific.net/ssp.57-58.69
https://doi.org/10.4028/www.scientific.net/ssp.57-58.69
Publikováno v:
Solid State Phenomena. :183-194
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0e8c7f66cec7436a429d749ad730eb9
https://doi.org/10.4028/www.scientific.net/ssp.47-48.183
https://doi.org/10.4028/www.scientific.net/ssp.47-48.183
Autor:
Shifeng Lu, Andrew Carswell, Tom Mendiola, guohua Wei, Sony Varghese, Kevin L. Beaman, David Fillmore, Irina Vasilyeva
Publikováno v:
2010 IEEE Workshop on Microelectronics and Electron Devices.
This paper studies the nanomechanical properties, including hardness and Young's modulus (both in a dry condition and in deionized water), fracture toughness, cohesive strength and scratch resistance of eight commonly used SiO2-based dielectric films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e36c079e1525eb5b59fa8db38340b2
https://doi.org/10.1109/wmed.2010.5453755
https://doi.org/10.1109/wmed.2010.5453755
Autor:
Aditya Agarwal, O. Kononchuk, George A. Rozgonyi, Kevin L. Beaman, Irina Bondarenko, Sergei V. Koveshnikov
Publikováno v:
Applied Physics Letters. 71:1107-1109
Gettering of Fe in silicon-on-insulator material has been investigated on both the bonded and separation by implantation of oxygen (SIMOX) platforms. Reduction of electrically active iron in intentionally contaminated and annealed wafers has been mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81d29aff4f0e29f3fcbce1ad5f3257a5
https://doi.org/10.1063/1.119741
https://doi.org/10.1063/1.119741
Publikováno v:
MRS Proceedings. 378
The lateral motion of iron impurities was observed and studied in ptype iron contaminated silicon. The lateral diffusion was induced by and then measured using Schottky diodes with a special interdigitated fingers design. Capture of the impurities wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::472606de06fd950f265b49fa9a9d8f7c
https://doi.org/10.1557/proc-378-291
https://doi.org/10.1557/proc-378-291