Zobrazeno 1 - 10
of 159
pro vyhledávání: '"Kevin K. Chan"'
Publikováno v:
Parasites & Vectors, Vol 13, Iss 1, Pp 1-9 (2020)
Abstract Background Vector-borne diseases are a major public health concern and cause significant morbidity and mortality. Zika virus (ZIKV) is the etiologic agent of a massive outbreak in the Americas that originated in Brazil in 2015 and shows a st
Externí odkaz:
https://doaj.org/article/775f4bbf08694d90b9f91e39fabf2b5b
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 537-542 (2018)
Symmetric lateral NPN bipolar junction transistors on Si-on-insulator having epitaxially grown emitter/collector regions are demonstrated, for the first time. A novel notch-assisted epitaxy scheme has been developed using faceted Si epitaxial (epi) l
Externí odkaz:
https://doaj.org/article/08c33c8de9ce4899bdb83821fbea37e6
Autor:
Jin Cai, Tak H. Ning, Christopher P. D'Emic, Jeng-Bang Yau, Kevin K. Chan, Joonah Yoon, Ramachandran Muralidhar, Dae-Gyu Park
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 5, Pp 105-113 (2014)
The SOI symmetric lateral bipolar transistor is uniquely suitable for operation at high injection currents where the injected minority carrier density in the base region is larger than the base doping concentration. Transistors operating in high-inje
Externí odkaz:
https://doaj.org/article/50de1d5839fc4da6a070e8fdefa421ef
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 537-542 (2018)
Symmetric lateral NPN bipolar junction transistors on Si-on-insulator having epitaxially grown emitter/collector regions are demonstrated, for the first time. A novel notch-assisted epitaxy scheme has been developed using faceted Si epitaxial (epi) l
Autor:
Tayfun Gokmen, Douglas M. Bishop, Seyoung Kim, Matthew Copel, Paul M. Solomon, Sanghoon Shin, Jianshi Tang, Teodor K. Todorov, Kevin K. Chan, K.-L. Lee, John Rozen, Wilfried Haensch
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We demonstrate a nonvolatile Electro-Chemical Random-Access Memory (ECRAM) based on lithium (Li) ion intercalation in tungsten oxide (WO 3 ) for high-speed, low-power neuromorphic computing. Symmetric and linear update on the channel conductance is a
Publikováno v:
Oncogenesis, Vol 13, Iss 1, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/5cf783773c9f406ab48df53a95d9696d
Autor:
Changhwan Yoon, Jun Lu, Brendan C. Yi, Kevin K. Chang, M. Celeste Simon, Sandra Ryeom, Sam S. Yoon
Publikováno v:
Oncogenesis, Vol 13, Iss 1, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/045a6872cf60497f8bfd19149ac31754
Autor:
Eduard A. Cartier, Renee Mo, Takashi Ando, Kevin K. Chan, John Rozen, Pouya Hashemi, Yohei Ogawa, John Bruley, Siyuranga O. Koswatta, Vijay Narayanan
Publikováno v:
IEEE Electron Device Letters. 38:303-305
We developed an Al2O3/HfO2 bi-layer gate dielectric with an in-situ O3 treatment for interface state density (Dit) and gate leakage current density (Jg) reductions on SiGe channels. We observed Ge-content dependent equivalent oxide thickness (EOT) sc
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
We report the first demonstration of symmetric lateral NPN transistors on SOI having epitaxially-grown emitter/collector (E/C). Employing a novel notch-assisted epitaxy scheme, using faceted Si epi as RIE mask to expose the vertical intrinsic-base ep
Autor:
Vijay Narayanan, Kam-Leung Lee, Pouya Hashemi, Takashi Ando, John A. Ott, Sebastian Engelmann, Renee T. Mo, Siyuranga O. Koswatta, John Bruley, Karthik Balakrishnan, Effendi Leobandung, Kevin K. Chan
Publikováno v:
2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
FinFETs with strained-SiGe channel have recently drawn significant attention due to their built in uniaxial strain, higher mobility and better reliability over conventional Si FETs. Research on pure Ge has been the major focus of many institutes over