Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kevin J. Uram"'
Publikováno v:
Superlattices and Microstructures. 24:385-388
We demonstrate the synthesis of modulation-doped silicate glass. Secondary ion mass spectroscopy measurements show the B and P concentrations to strongly oscillate on a nanometre-scale. This finding is confirmed by scanning-electron microscopy. Final
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::673940cc387bbe52d1114ead795b07ec
https://doi.org/10.1006/spmi.1998.0594
https://doi.org/10.1006/spmi.1998.0594
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:1147-1151
Three‐dimensional (3D) numerical equipment modeling using the simulator PHOENICS‐CVD was used to investigate a low pressure chemical vapor deposition process for boron and phosphorus doped silicon glass deposition from TEOS, PH3, O2, and TEB gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c5ede512817cf41094bd015f65acde2
https://doi.org/10.1116/1.580285
https://doi.org/10.1116/1.580285
Publikováno v:
Applied Physics Letters. 62:699-701
The effect of phosphorous incorporation on the deposition rate of phosphosilicate glass from the reaction of PH3, O2, and tetraethoxysilane (TEOS) has been studied. The previously reported apparent catalytic effect of PH3 on the deposition rate of Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a98903697035d1707baa0d930dde0f7c
https://doi.org/10.1063/1.108844
https://doi.org/10.1063/1.108844
Publikováno v:
Applied Physics Letters. 57:1034-1036
We report on the role of hydrogen surface passivation in achieving low‐temperature silicon epitaxy by chemical vapor deposition processes. Upon insertion of an HF‐etched silicon wafer into an epitaxial silicon deposition apparatus, residual conta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::393b8f11fab63d25705694d466ce7991
https://doi.org/10.1063/1.103557
https://doi.org/10.1063/1.103557
Publikováno v:
Journal of The Electrochemical Society. 140:L178-L179
In this letter we present initial results for the anisotropic deposition of doped silicate glass. The deposition was performed in a previously described low pressure chemical vapor deposition reactor by the reaction of tetraethylorthosilicate, trieth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee0e9e1da4d4140453f56adb24358b5d
https://doi.org/10.1149/1.2221157
https://doi.org/10.1149/1.2221157
Publikováno v:
Applied Physics Letters. 53:2555-2557
A series of Si:Ge alloys and structures has been prepared by ultrahigh‐vacuum chemical vapor deposition. Alloys of composition 0≤Ge/Si≤0.20 are readily deposited at T=550 °C. Commensurate, defect‐free strained layers are deposited up to a cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6b577ae95e211900cbfc93cbd7cd6bc
https://doi.org/10.1063/1.100206
https://doi.org/10.1063/1.100206
Autor:
Bernard S. Meyerson, Kevin J. Uram
Publikováno v:
MRS Proceedings. 102
High quality, low defect density, single crystalline silicon/germanium alloys have been grown on Si(100) substrate wafers in a low temperature UHV-CVD reactor. Using a silane/germane gaseous source, the growth rate of the epitaxial layer increases fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::272f544e0e196c140cd0b6b95142e41f
https://doi.org/10.1557/proc-102-307
https://doi.org/10.1557/proc-102-307