Zobrazeno 1 - 10
of 526
pro vyhledávání: '"Kevin J Chen"'
Publikováno v:
Interactive Journal of Medical Research, Vol 12, p e44606 (2023)
BackgroundDuring the COVID-19 pandemic, a school closure policy was adopted to prevent cluster transmission in schools and subsequent household transmission. However, the effectiveness of school closure is not consistent in studies conducted in diffe
Externí odkaz:
https://doaj.org/article/fa82b23801db4671bf4ba3050e7fb39c
Publikováno v:
SAGE Open Medical Case Reports, Vol 9 (2021)
Complex dislocation of the metacarpophalangeal joint of the index finger is rare and often requires surgical intervention. Here, we present a case of an index finger metacarpophalangeal joint dislocation requiring open reduction due to obstruction by
Externí odkaz:
https://doaj.org/article/e7c623171bab4cf1843cc286802d6222
Publikováno v:
PLoS ONE, Vol 16, Iss 8, p e0254479 (2021)
BackgroundSentinel physician surveillance in communities has played an important role in detecting early signs of epidemics. The traditional approach is to let the primary care physician voluntarily and actively report diseases to the health departme
Externí odkaz:
https://doaj.org/article/33cd8788e1514cdca3a16a166970e77c
Autor:
Ta-Chien Chan, Ching-Chi Chou, Yi-Chi Chu, Jia-Hong Tang, Li-Chi Chen, Hsien-Ho Lin, Kevin J. Chen, Ran-Chou Chen
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-11 (2022)
Abstract Strict and repeated lockdowns have caused public fatigue regarding policy compliance and had a large impact on several countries’ economies. We aimed to evaluate the effectiveness of a soft lockdown policy and the strategy of active commun
Externí odkaz:
https://doaj.org/article/4f65a4b2b2f94a68a12518af665036e5
Publikováno v:
AIP Advances, Vol 12, Iss 4, Pp 045125-045125-5 (2022)
We report GaN high-electron-mobility transistors (HEMTs) with a thick (7.7 µm) GaN buffer on a Czochralski low resistivity Si (LRS) substrate. The GaN HEMTs exhibit high performance for both radio-frequency (RF) amplification and power conversion. T
Externí odkaz:
https://doaj.org/article/b3f522b91bbd43c8af4bc4e538ec6ab4
Autor:
Yanlin Wu, Jin Wei, Maojun Wang, Muqin Nuo, Junjie Yang, Wei Lin, Zheyang Zheng, Li Zhang, Mengyuan Hua, Xuelin Yang, Yilong Hao, Kevin J. Chen, Bo Shen
Publikováno v:
IEEE Electron Device Letters. 44:25-28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23b4a439af27fe40615de1e8497baa2b
https://doi.org/10.1109/led.2022.3222170
https://doi.org/10.1109/led.2022.3222170
Publikováno v:
IEEE Transactions on Industrial Electronics. :1-9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f2bae178ce566879f21c4a04b6f14fc
https://doi.org/10.1109/tie.2023.3265036
https://doi.org/10.1109/tie.2023.3265036
Publikováno v:
IEEE Transactions on Industrial Electronics. 69:12773-12783
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb2376721c726d2984cf1892a4d80c5d
https://doi.org/10.1109/tie.2021.3135644
https://doi.org/10.1109/tie.2021.3135644
Autor:
Li Zhang, Zheyang Zheng, Wenjie Song, Tao Chen, Sirui Feng, Junting Chen, Mengyuan Hua, Kevin J. Chen
Publikováno v:
IEEE Electron Device Letters. 43:1822-1825
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86c212d795c776343cced0cf0954a1a4
https://doi.org/10.1109/led.2022.3206470
https://doi.org/10.1109/led.2022.3206470
Publikováno v:
IEEE Electron Device Letters. 43:1826-1829
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4acac3f853ba6239cf3d67fd0980830
https://doi.org/10.1109/led.2022.3208909
https://doi.org/10.1109/led.2022.3208909