Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length

Autor: Pankaj B. Shah, Dmitry Ruzmetov, James Weil, A. Glen Birdwell, Tony Ivanov, Khamsouk Kingkeo, Kevin G. Crawford, Mahesh R. Neupane

Publikováno v: IEEE Transactions on Electron Devices. 67:2270-2275

Wereport on the fabrication and measurement of hydrogen-terminated diamond field-effect transistors (FETs) incorporating V2O5 as a surface acceptor material to induce transfer doping. Comparing a range of gate lengths down to 50 nm, we observe invers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::69020314235ed34c5b5ea86e2f487f74
https://doi.org/10.1109/ted.2020.2989736

Thermal performance of diamond field-effect transistors

Autor: A. Glen Birdwell, Daniel Shoemaker, Kevin G. Crawford, Sukwon Choi, Tony Ivanov, Hiu Yung Wong, James Weil, Leonard M. De La Cruz, James Spencer Lundh, Pankaj B. Shah

Publikováno v: Applied Physics Letters. 119:143502

In this report, the thermal performance of a hydrogen (H)-terminated diamond field-effect transistor (FET) is investigated using Raman spectroscopy and electrothermal device modeling. First, the thermal conductivity (κdiamond) of the active diamond

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::562e8650b5c31b0b39ec83977961eb41
https://doi.org/10.1063/5.0061948

Surface transfer doping of diamond: A review

Autor: David A. J. Moran, David A. Macdonald, Isha Maini, Kevin G. Crawford

Publikováno v: Progress in Surface Science. 96:100613

Ultra-wide bandgap materials show great promise as a solution to some of the limitations of current state of the art semiconductor technology. Among these, diamond has exhibited great potential for use in high-power, high-temperature electronics, as

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f90ae87f07b022691ce9850c0ec828e8
https://doi.org/10.1016/j.progsurf.2021.100613

Performance Enhancement of Al 2 O 3 /H-Diamond MOSFETs Utilizing Vacuum Annealing and V 2 O 5 as a Surface Electron Acceptor

Autor: Alexandre Tallaire, David A. Macdonald, David A. J. Moran, R. Issaoui, Kevin G. Crawford

Publikováno v: IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2018, 39 (9), pp.1354-1357. ⟨10.1109/led.2018.2856920⟩

We report on the performance enhancement of 250-nm gate-length H-diamond FETs through thermal treatment of devices at 400 °C and the incorporation of V2O5 as a surface electron acceptor layer. Encapsulation of the H-diamond surface with V2O5 is foun

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcd56947484ac68d7c28d57af471b353
https://hal.archives-ouvertes.fr/hal-02346264

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Autor: Claudio Verona, Liang Cao, Ernesto Limiti, Kevin G. Crawford, David A. J. Moran, Dongchen Qi, Alexandre Tallaire, Andrew T. S. Wee

Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V2O5 as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V2O5 as revea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bc6b9c9d8facd9c4671c4204c9589f2
https://eprints.gla.ac.uk/114911/1/114911.pdf