Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Kevin Füchsel"'
Autor:
Martin Steglich, Christian Patzig, Lutz Berthold, Frank Schrempel, Kevin Füchsel, Thomas Höche, Ernst-Bernhard Kley, Andreas Tünnermann
Publikováno v:
AIP Advances, Vol 3, Iss 7, Pp 072108-072108 (2013)
The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typic
Externí odkaz:
https://doaj.org/article/215bfc868e7b411ab5272532c15e96eb
Autor:
Svetoslav Koynov, Stefan Kontermann, Thomas Gimpel, Ralf B. Wehrspohn, Xiaopeng Li, Johannes Ziegler, Howard M. Branz, Kevin Füchsel, Benjamin Gesemann, Michael Algasinger, Matthias Zilk, Jihun Oh, Alexander Sprafke, Thomas Käsebier, Martin Otto, Volker Naumann
Publikováno v:
Photon Management in Solar Cells
This article presents an overview of the fabrication methods of black silicon, their resulting morphologies, and a quantitative comparison of their optoelectronic properties. To perform this quantitative comparison, different groups working on black
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a83b1111d833fd7d3cec12ce748a376
https://doi.org/10.1002/adom.201400395
https://doi.org/10.1002/adom.201400395
Publikováno v:
Advanced Optical Technologies. 3:103-111
Aluminum-doped zinc oxide (AZO) is one of the most promising transparent conductive oxide (TCO) materials that can substitute the high-quality but costly indium tin oxide (ITO). To ensure high-quality films as well as moderate production costs, inlin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a839401645e9ad82496492e4c7ca49d
https://doi.org/10.1515/aot-2013-0044
https://doi.org/10.1515/aot-2013-0044
Autor:
Jihun Oh, Volker Naumann, Xiaopeng Li, Thomas Gimpel, Matthias Zilk, Ralf B. Wehrspohn, Howard M. Branz, Martin Otto, Michael Algasinger, Svetoslav Koynov, Benjamin Gesemann, Kevin Füchsel, Johannes Ziegler, Thomas Käsebier, Alexander Sprafke, Stefan Kontermann
This article presents an overview of the fabrication methods of black silicon, their resulting morphologies, and a quantitative comparison of their optoelectronic properties. To perform this quantitative comparison, different groups working on black
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1ef3ff9c22e93dfe79704edb4a709af
https://publica.fraunhofer.de/handle/publica/239395
https://publica.fraunhofer.de/handle/publica/239395
Autor:
P. Hoyer, Astrid Bingel, Ulrike Blumröder, Rainer Eichberger, Kevin Füchsel, Thomas Unold, Hannes Hempel, Stefan Nolte
Publikováno v:
physica status solidi (a). 214:1600590
The influence of near-surface crystal damage on carrier dynamics in silicon has been investigated with optical-pump THz-probe and THz emission studies. The surface damage is caused by a plasma process used for the fabrication of the ultrathin insulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7e2df063e151e73de757b39b001a4c9
https://doi.org/10.1002/pssa.201600590
https://doi.org/10.1002/pssa.201600590
Autor:
Alexander Sprafke, Kevin Füchsel, Johannes Ziegler, Xiaopeng Li, Thomas Käsebier, Martin Otto, Ralf B. Wehrspohn, Benjamin Gesemann, Matthias Kroll
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
Optical properties of black silicon (b-Si) can be tailored to minimize reflection losses to less than 0.6 % between 300-1000 nm and to improve the absorption at the silicon band-edge by light-trapping. Recently, metal assisted wet-chemically etched (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e09efb99366e320ba41d7d6c0133c7ac
https://doi.org/10.1109/pvsc.2013.6744374
https://doi.org/10.1109/pvsc.2013.6744374
A comprehensive material study of different transparent conductive oxides (TCOs) is presented. The layers are deposited by pulsed direct current (DC) magnetron sputtering in an inline sputtering system. Indium tin oxide (ITO) films are studied in det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93e010a275d2bd3fca04ca0624d215de
https://publica.fraunhofer.de/handle/publica/233190
https://publica.fraunhofer.de/handle/publica/233190
Autor:
Ernst-Bernhard Kley, Frank Schrempel, Martin Steglich, Kevin Füchsel, Lutz Berthold, Thomas Höche, Christian Patzig, Andreas Tünnermann
Publikováno v:
AIP Advances, Vol 3, Iss 7, Pp 072108-072108 (2013)
The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fff70abe3d4876940828d0acec60e696
https://publica.fraunhofer.de/handle/publica/233013
https://publica.fraunhofer.de/handle/publica/233013
Autor:
Martin Otto, Matthias Kroll, Thomas Käsebier, Benjamin Gesemann, Ralf B. Wehrspohn, Johannes Ziegler, Kevin Füchsel, Xiaopeng Li, Alexander Sprafke
Publikováno v:
Renewable Energy and the Environment.
Black silicon (b-Si) structures offer improved light absorption but require appropiate surface passivation for photovoltaic applications. Here, we compare the opto-electronic performance of different wet and dry etched b-Si structures passivated by t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b1ea6dd8dc460b2cd469872e9ae60f5
https://doi.org/10.1364/pv.2013.pm1c.3
https://doi.org/10.1364/pv.2013.pm1c.3
Autor:
Norbert Kaiser, Matthias Kroll, Ralf B. Wehrspohn, Ernst-Bernhard Kley, Kevin Füchsel, Thomas Käsebier, Martin Otto, Thomas Pertsch, Andreas Tünnermann
Publikováno v:
Photonics for Solar Energy Systems IV.
The challenge of future solar cell technologies is the combination of highly efficient cell concepts and low cost fabrication processes. A promising concept for high efficiencies is the usage of nanostructured silicon, so-called black silicon. Due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d1754991b9803b5832d7ecdb4de7281
https://doi.org/10.1117/12.923748
https://doi.org/10.1117/12.923748