Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Kevin Brenner"'
Autor:
Ann M. Simon, Keira Newkirk, Laura A. Miller, Kristi L. Turner, Kevin Brenner, Michael Stephens, Levi J. Hargrove
Publikováno v:
Frontiers in Rehabilitation Sciences, Vol 5 (2024)
IntroductionMyoelectric pattern recognition systems have shown promising control of upper limb powered prostheses and are now commercially available. These pattern recognition systems typically record from up to 8 muscle sites, whereas other control
Externí odkaz:
https://doaj.org/article/e56d574654a94ddaa4af73921c796d2c
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 6, Pp 466-472 (2016)
We report improved control over the quality and uniformity of CVD graphene devices through a novel fabrication technique. An overlying HSQ pinning dielectric is used to physically anchor and protect the graphene sheet, resulting in electron and hole
Externí odkaz:
https://doaj.org/article/ff17e6dd68084f929a7aae35d4661472
Autor:
Kevin Brenner, Arif Sanli Ergun, Kamyar Firouzi, Morten Fischer Rasmussen, Quintin Stedman, Butrus (Pierre) Khuri–Yakub
Publikováno v:
Micromachines, Vol 10, Iss 2, p 152 (2019)
Capacitive micromachined ultrasonic transducer (CMUT) technology has enjoyed rapid development in the last decade. Advancements both in fabrication and integration, coupled with improved modelling, has enabled CMUTs to make their way into mainstream
Externí odkaz:
https://doaj.org/article/3c29fcef7f59400e888b892521dbd5b0
Publikováno v:
Nano letters. 22(20)
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also improve the
Autor:
Ryan W. Grady, Eric Pop, Cagil Koroglu, Sam Vaziri, Victoria Chen, Alwin Daus, Kevin Brenner, Hye Ryoung Lee, Kirstin Schauble, Connor S. Bailey
Publikováno v:
Nature Electronics. 4:495-501
Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also improve the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c980d6cf9afb6f351320aee616b195fb
Publikováno v:
2019 IEEE International Ultrasonics Symposium (IUS).
This paper presents a novel method to significantly broaden the bandwidth of airborne capacitive micromachined ultrasonic transducers (CMUTs) by introducing a gaseous squeeze film as a damping mechanism. The damping and stiffening effects of the sque
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 66(11)
This paper presents a novel method to increase the bandwidth (BW) of airborne capacitive micromachined ultrasonic transducers (CMUTs). This method introduces a gaseous squeeze film as a damping mechanism, which induces a stiffening effect that lowers
Publikováno v:
DRC
Flexible electronics could greatly benefit from the realization of large-scale field-effect transistors (FETs) based on two-dimensional (2D) materials that exhibit high carrier mobility, flexibility, and transparency [1]. As high-quality 2D materials
Publikováno v:
DRC
The temperature coefficient of resistance (TCR) of thin metal lines is often used for applications in thermometry [1], phase change [2], or even thermal accelerometers [3]. However, the TCR of metals drops sharply in films thinner than ~10 nm due to